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Delin Zhang
Delin Zhang
School of Electronic and Information Engineering, Tiangong University; University of Minnesota
Verified email at tiangong.edu.cn
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Cited by
Year
Room-temperature high spin–orbit torque due to quantum confinement in sputtered Bi x Se (1–x) films
DC Mahendra, R Grassi, JY Chen, M Jamali, DR Hickey, D Zhang, Z Zhao, ...
Nature materials 17 (9), 800, 2018
4342018
Unidirectional spin-Hall and Rashba− Edelstein magnetoresistance in topological insulator-ferromagnet layer heterostructures
Y Lv, J Kally, D Zhang, JS Lee, M Jamali, N Samarth, JP Wang
Nature communications 9 (1), 111, 2018
1472018
Giant voltage manipulation of MgO-based magnetic tunnel junctions via localized anisotropic strain: A potential pathway to ultra-energy-efficient memory technology
Z Zhao, M Jamali, N D'Souza, D Zhang, S Bandyopadhyay, J Atulasimha, ...
Applied Physics Letters 109 (9), 2016
1042016
First-principles study of the structural stability of cubic, tetragonal and hexagonal phases in Mn3Z (Z= Ga, Sn and Ge) Heusler compounds
D Zhang, B Yan, SC Wu, J Kübler, G Kreiner, SSP Parkin, C Felser
Journal of Physics: Condensed Matter 25 (20), 206006, 2013
1042013
Intrinsic room temperature ferromagnetism in boron-doped ZnO
XG Xu, HL Yang, Y Wu, DL Zhang, SZ Wu, J Miao, Y Jiang, XB Qin, ...
Applied Physics Letters 97 (23), 2010
802010
Low Gilbert damping constant in perpendicularly magnetized W/CoFeB/MgO films with high thermal stability
DM Lattery, D Zhang, J Zhu, X Hang, JP Wang, X Wang
Scientific reports 8 (1), 13395, 2018
722018
Voltage control of ferrimagnetic order and voltage-assisted writing of ferrimagnetic spin textures
M Huang, MU Hasan, K Klyukin, D Zhang, D Lyu, P Gargiani, ...
Nature Nanotechnology 16 (9), 981-988, 2021
552021
Perpendicular magnetic anisotropy of full-Heusler films in Pt/Co2FeAl/MgO trilayers
X Li, S Yin, Y Liu, D Zhang, X Xu, J Miao, Y Jiang
Applied physics express 4 (4), 043006, 2011
542011
Field-free spin-orbit torque switching of composite perpendicular CoFeB/Gd/CoFeB layers utilized for three-terminal magnetic tunnel junctions
JY Chen, M Dc, D Zhang, Z Zhao, M Li, JP Wang
Applied Physics Letters 111 (1), 2017
442017
Time-resolved magneto-optical Kerr effect of magnetic thin films for ultrafast thermal characterization
JY Chen, J Zhu, D Zhang, DM Lattery, M Li, JP Wang, X Wang
The journal of physical chemistry letters 7 (13), 2328-2332, 2016
422016
Topological surface states of Bi2Se3 coexisting with Se vacancies
B Yan, D Zhang, C Felser
physica status solidi (RRL)–Rapid Research Letters 7 (1‐2), 148-150, 2013
372013
Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions
DL Zhang, C Sun, Y Lv, KB Schliep, Z Zhao, JY Chen, PM Voyles, ...
Physical Review Applied 9 (4), 044028, 2018
322018
Bipolar electric-field switching of perpendicular magnetic tunnel junctions through voltage-controlled exchange coupling
D Zhang, M Bapna, W Jiang, D Sousa, YC Liao, Z Zhao, Y Lv, P Sahu, ...
Nano letters 22 (2), 622-629, 2022
312022
Spin pumping and large field-like torque at room temperature in sputtered amorphous WTe2− x films
Y Fan, H Li, M Dc, T Peterson, J Held, P Sahu, J Chen, D Zhang, ...
APL Materials 8 (4), 2020
292020
Room-temperature perpendicular magnetization switching through giant spin-orbit torque from sputtered BixSe (1-x) topological insulator material
M Jamali, JY Chen, DR Hickey, D Zhang, Z Zhao, H Li, P Quarterman, ...
arXiv preprint arXiv:1703.03822, 2017
282017
High spin polarization in epitaxial Fe4N thin films using Cr and Ag as buffer layers
H Li, X Li, D Kim, G Zhao, D Zhang, Z Diao, T Chen, JP Wang
Applied Physics Letters 112 (16), 2018
272018
Evaluation of operating margin and switching probability of voltage-controlled magnetic anisotropy magnetic tunnel junctions
J Song, I Ahmed, Z Zhao, D Zhang, SS Sapatnekar, JP Wang, CH Kim
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 4 …, 2018
252018
Electric field switchable magnetic devices
JP Wang, D Zhang, SA Majetich, M Bapna
US Patent 10,586,579, 2020
202020
Enhancement of tunneling magnetoresistance by inserting a diffusion barrier in L1-FePd perpendicular magnetic tunnel junctions
DL Zhang, KB Schliep, RJ Wu, P Quarterman, D Reifsnyder Hickey, Y Lv, ...
Applied Physics Letters 112 (15), 2018
202018
High-frequency magnetoacoustic resonance through strain-spin coupling in perpendicular magnetic multilayers
DL Zhang, J Zhu, T Qu, DM Lattery, RH Victora, X Wang, JP Wang
Science advances 6 (38), eabb4607, 2020
182020
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