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Sung Hyun Jo
Sung Hyun Jo
Crossbar Inc.
Verified email at umich.edu
Title
Cited by
Cited by
Year
Nanoscale memristor device as synapse in neuromorphic systems
SH Jo, T Chang, I Ebong, BB Bhadviya, P Mazumder, W Lu
Nano letters 10 (4), 1297-1301, 2010
43432010
Short-term memory to long-term memory transition in a nanoscale memristor
T Chang, SH Jo, W Lu
ACS nano 5 (9), 7669-7676, 2011
9522011
High-density crossbar arrays based on a Si memristive system
SH Jo, KH Kim, W Lu
Nano letters 9 (2), 870-874, 2009
7702009
CMOS compatible nanoscale nonvolatile resistance switching memory
SH Jo, W Lu
Nano letters 8 (2), 392-397, 2008
5772008
Synaptic behaviors and modeling of a metal oxide memristive device
T Chang, SH Jo, KH Kim, P Sheridan, S Gaba, W Lu
Applied physics A 102, 857-863, 2011
4582011
Programmable resistance switching in nanoscale two-terminal devices
SH Jo, KH Kim, W Lu
Nano letters 9 (1), 496-500, 2009
4242009
Nanoscale resistive memory with intrinsic diode characteristics and long endurance
KH Kim, S Hyun Jo, S Gaba, W Lu
Applied Physics Letters 96 (5), 2010
2802010
Silicon-based nanoscale resistive device with adjustable resistance
W Lu, SH Jo, KH Kim
US Patent 8,687,402, 2014
2062014
3D-stackable crossbar resistive memory based on field assisted superlinear threshold (FAST) selector
SH Jo, T Kumar, S Narayanan, WD Lu, H Nazarian
2014 IEEE international electron devices meeting, 6.7. 1-6.7. 4, 2014
2032014
Silicon based nanoscale crossbar memory
W Lu, SH Jo, KH Kim
US Patent 8,071,972, 2011
1412011
Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects
SH Jo, KH Kim, J Bettinger
US Patent 9,570,683, 2017
1362017
Rectification element and method for resistive switching for non volatile memory device
W Lu, SH Jo
US Patent 8,351,241, 2013
1262013
Si memristive devices applied to memory and neuromorphic circuits
SH Jo, KH Kim, T Chang, S Gaba, W Lu
Proceedings of 2010 IEEE International Symposium on Circuits and Systems, 13-16, 2010
1262010
Cross-point resistive RAM based on field-assisted superlinear threshold selector
SH Jo, T Kumar, S Narayanan, H Nazarian
IEEE Transactions on Electron Devices 62 (11), 3477-3481, 2015
1242015
Nanoscale memristive devices for memory and logic applications
SH Jo
University of Michigan, 2010
1112010
Two terminal resistive switching device structure and method of fabricating
SH Jo, SB Herner
US Patent 9,012,307, 2015
1012015
Intrinsic Programming Current Control for a RRAM
SH Jo, W Lu
US Patent App. 12/834,610, 2012
1012012
Device switching using layered device structure
SH Jo, W Lu
US Patent 8,884,261, 2014
942014
Interface control for improved switching in RRAM
SH Jo, H Nazarian, W Lu
US Patent 8,441,835, 2013
922013
Nonvolatile Resistive Switching Devices Based on Nanoscale Metal/Amorphous Silicon/Crystalline Silicon Junctions
SH Jo, W Lu
MRS Online Proceedings Library (OPL) 997, 0997-I04-05, 2007
812007
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