Giuseppe Carlo Tettamanzi

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Sven RoggeProfessor of Physics, University of New South WalesVerified email at unsw.edu.au
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
Andrew DzurakScientia Professor in Electrical Engineering, UNSWVerified email at unsw.edu.au
Maud VinetQuobly (ex CEA)Verified email at quobly.io
Rajib RahmanAssociate Professor of Physics, University of New South WalesVerified email at unsw.edu.au
Ruichen ZhaoIBM QuantumVerified email at ibm.com
Mikko MöttönenAssociate Professor (tenured) of Quantum Technology, Aalto University and VTTVerified email at aalto.fi
Marco FanciulliProfessor of Condensed Matter Physics, University of Milano BicoccaVerified email at unimib.it
David A. MahnsWestern Sydney UniversityVerified email at westernsydney.edu.au
Antonio LautoAssociate Professor, University of Western SydneyVerified email at uws.edu.au
María José CalderónInstituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones CientíficasVerified email at icmm.csic.es
Damia MawadSchool of Materials Science and Engineering, University of New South WalesVerified email at unsw.edu.au
Paul BreenBiomedical Engineering & Neuroscience, The MARCS Institute, Western Sydney UnviersityVerified email at uws.edu.au
Gaetano Gargiulo, Gaetano D. GargiuloResearch Professor, Western Sydney University, "Federico II" The University ofVerified email at westernsydney.edu.au
Marcus StoodleyMacquarie UniversityVerified email at mq.edu.au
Ramon AguadoSenior Researcher, Instituto de Ciencia de Materiales de Madrid (ICMM - CSIC). (ROR 02qqy8j09)Verified email at icmm.csic.es
Belita KoillerInstituto de Física, Universidade Federal do Rio de JaneiroVerified email at if.ufrj.br
Timothy DutyD-Wave Quantum Inc.Verified email at dwavesys.com
Vyacheslavs KashcheyevsUniversity of LatviaVerified email at latnet.lv
Janis TimoshenkoFritz-Haber InstituteVerified email at fhi-berlin.mpg.de

Giuseppe Carlo Tettamanzi

giuseppe.tettamanzi@adelaide.edu.au

Verified email at adelaide.edu.au

Solid State Physics Quantum Transport Mesoscopic Physics Nano-electronics


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An accurate single-electron pump based on a highly tunable silicon quantum dot A Rossi, T Tanttu, KY Tan, I Iisakka, R Zhao, KW Chan, GC Tettamanzi, ... Nano letters 14 (6), 3405-3411, 2014	91	2014
Few electron limit of n-type metal oxide semiconductor single electron transistors E Prati, M De Michielis, M Belli, S Cocco, M Fanciulli, D Kotekar-Patil, ... Nanotechnology 23 (21), 215204, 2012	88	2012
Magnetic-field probing of an SU (4) Kondo resonance in a single-atom transistor GC Tettamanzi, J Verduijn, GP Lansbergen, M Blaauboer, MJ Calderón, ... Physical review letters 108 (4), 046803, 2012	69	2012
Tunable Kondo effect in a single donor atom GP Lansbergen, GC Tettamanzi, J Verduijn, N Collaert, S Biesemans, ... Nano letters 10 (2), 455-460, 2010	55	2010
Charge pumping through a single donor atom GC Tettamanzi, R Wacquez, S Rogge New Journal of Physics 16 (6), 063036, 2014	54	2014
Probing the spin states of a single acceptor atom J Van der Heijden, J Salfi, JA Mol, J Verduijn, GC Tettamanzi, ... Nano letters 14 (3), 1492-1496, 2014	54	2014
Electric field reduced charging energies and two-electron bound excited states of single donors in silicon R Rahman, GP Lansbergen, J Verduijn, GC Tettamanzi, SH Park, ... Physical Review B—Condensed Matter and Materials Physics 84 (11), 115428, 2011	46	2011
Wave function control over a single donor atom J Verduijn, GC Tettamanzi, S Rogge Nano Letters 13 (4), 1476-1480, 2013	45	2013
Heterointerface effects on the charging energy of the shallow ground state in silicon: Role of dielectric mismatch MJ Calderón, J Verduijn, GP Lansbergen, GC Tettamanzi, S Rogge, ... Physical Review B—Condensed Matter and Materials Physics 82 (7), 075317, 2010	42	2010
Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation BC Johnson, GC Tettamanzi, ADC Alves, S Thompson, C Yang, ... Applied Physics Letters 96 (26), 2010	39	2010
Lifetime-enhanced transport in silicon due to spin and valley blockade GP Lansbergen, R Rahman, J Verduijn, GC Tettamanzi, N Collaert, ... Physical Review Letters 107 (13), 136602, 2011	38	2011
Superconducting transition in Nb nanowires fabricated using focused ion beam GC Tettamanzi, CI Pakes, A Potenza, S Rubanov, CH Marrows, S Prawer Nanotechnology 20 (46), 465302, 2009	30	2009
Stimulation and repair of peripheral nerves using bioadhesive graft‐antenna A Sliow, Z Ma, G Gargiulo, D Mahns, D Mawad, P Breen, M Stoodley, ... Advanced Science 6 (11), 1801212, 2019	29	2019
Probing the quantum states of a single atom transistor at microwave frequencies GC Tettamanzi, SJ Hile, MG House, M Fuechsle, S Rogge, MY Simmons ACS nano 11 (3), 2444-2451, 2017	27	2017
Single dopant impact on electrical characteristics of SOI NMOSFETs with effective length down to 10nm R Wacquez, M Vinet, M Pierre, B Roche, X Jehl, O Cueto, J Verduijn, ... 2010 Symposium on VLSI Technology, 193-194, 2010	26	2010
Thermionic emission as a tool to study transport in undoped nFinFETs GC Tettamanzi, A Paul, GP Lansbergen, J Verduijn, S Lee, N Collaert, ... IEEE electron device letters 31 (2), 150-152, 2009	19	2009
Gigahertz single-electron pumping mediated by parasitic states A Rossi, J Klochan, J Timoshenko, FE Hudson, M Möttönen, S Rogge, ... Nano letters 18 (7), 4141-4147, 2018	14	2018
Interface trap density metrology of state-of-the-art undoped Si n-FinFETs GC Tettamanzi, A Paul, S Lee, SR Mehrotra, N Collaert, S Biesemans, ... IEEE Electron Device Letters 32 (4), 440-442, 2011	14	2011
Coherent transport through a double donor system in silicon J Verduijn, GC Tettamanzi, GP Lansbergen, N Collaert, S Biesemans, ... Applied Physics Letters 96 (7), 2010	14	2010
A planar Al-Si Schottky barrier metal–oxide–semiconductor field effect transistor operated at cryogenic temperatures WE Purches, A Rossi, R Zhao, S Kafanov, TL Duty, AS Dzurak, S Rogge, ... Applied Physics Letters 107 (6), 2015	12	2015

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