| Benefits of homoepitaxy on the properties of nonpolar (Zn, Mg) O/ZnO quantum wells on a-plane ZnO substrates JM Chauveau, M Teisseire, H Kim-Chauveau, C Deparis, C Morhain, ... Applied Physics Letters 97 (8), 2010 | 84 | 2010 |
| Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy A Hierro, JM Ulloa, JM Chauveau, A Trampert, MA Pinault, E Tournié, ... Journal of applied physics 94 (4), 2319-2324, 2003 | 83 | 2003 |
| Exciton radiative properties in nonpolar homoepitaxial ZnO/(Zn, Mg) O quantum wells L Béaur, T Bretagnon, B Gil, A Kavokin, T Guillet, C Brimont, D Tainoff, ... Physical Review B—Condensed Matter and Materials Physics 84 (16), 165312, 2011 | 82 | 2011 |
| Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy JM Chauveau, Y Androussi, A Lefebvre, J Di Persio, Y Cordier Journal of applied physics 93 (7), 4219-4225, 2003 | 81 | 2003 |
| Non-polar a-plane ZnMgO/ZnO quantum wells grown by molecular beam epitaxy JM Chauveau, M Laügt, P Vennegues, M Teisseire, B Lo, C Deparis, ... Semiconductor science and technology 23 (3), 035005, 2008 | 80 | 2008 |
| Interface structure and anisotropic strain relaxation of nonpolar wurtzite (112¯) and (101¯) orientations: ZnO epilayers grown on sapphire JM Chauveau, P Vennéguès, M Laügt, C Deparis, J Zuniga-Perez, ... Journal of Applied Physics 104 (7), 2008 | 77 | 2008 |
| Nanoscale analysis of the In and N spatial redistributions upon annealing of GaInNAs quantum wells JM Chauveau, A Trampert, KH Ploog, E Tournié Applied physics letters 84 (14), 2503-2505, 2004 | 74 | 2004 |
| Interfacial structure and defect analysis of nonpolar ZnO films grown on R-plane sapphire by molecular beam epitaxy P Vennéguès, JM Chauveau, M Korytov, C Deparis, J Zuniga-Perez, ... Journal of Applied Physics 103 (8), 2008 | 62 | 2008 |
| Residual and nitrogen doping of homoepitaxial nonpolar m-plane ZnO films grown by molecular beam epitaxy D Taïnoff, M Al-Khalfioui, C Deparis, B Vinter, M Teisseire, C Morhain, ... Applied Physics Letters 98 (13), 2011 | 57 | 2011 |
| Polarization-sensitive Schottky photodiodes based on a-plane ZnO/ZnMgO multiple quantum-wells G Tabares, A Hierro, B Vinter, JM Chauveau Applied Physics Letters 99 (7), 2011 | 52 | 2011 |
| Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells JM Chauveau, A Trampert, KH Ploog, MA Pinault, E Tournié Applied physics letters 82 (20), 3451-3453, 2003 | 50 | 2003 |
| Growth of non-polar ZnO/(Zn, Mg) O quantum well structures on R-sapphire by plasma-assisted molecular beam epitaxy JM Chauveau, DA Buell, M Laügt, P Vennegues, M Teisseire-Doninelli, ... Journal of crystal growth 301, 366-369, 2007 | 49 | 2007 |
| GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm E Tournie, MA Pinault, M Laügt, JM Chauveau, A Trampert, KH Ploog Applied physics letters 82 (12), 1845-1847, 2003 | 47 | 2003 |
| Well-ordered ZnO nanowires with controllable inclination on semipolar ZnO surfaces by chemical bath deposition T Cossuet, H Roussel, JM Chauveau, O Chaix-Pluchery, JL Thomassin, ... Nanotechnology 29 (47), 475601, 2018 | 46 | 2018 |
| Correlation between interface structure and light emission at 1.3–1.55 μm of (Ga, In)(N, As) diluted nitride heterostructures on GaAs substrates A Trampert, JM Chauveau, KH Ploog, E Tournié, A Guzmán Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004 | 45 | 2004 |
| Demonstrating the decoupling regime of the electron-phonon interaction in a quantum dot using chirped optical excitation T Kaldewey, S Lüker, AV Kuhlmann, SR Valentin, JM Chauveau, ... Physical Review B 95 (24), 241306, 2017 | 44 | 2017 |
| Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents A Redondo-Cubero, A Hierro, JM Chauveau, K Lorenz, G Tabares, ... CrystEngComm 14 (5), 1637-1640, 2012 | 43 | 2012 |
| Homoepitaxy of non-polar ZnO/(Zn, Mg) O multi-quantum wells: From a precise growth control to the observation of intersubband transitions N Le Biavan, M Hugues, M Montes Bajo, J Tamayo-Arriola, A Jollivet, ... Applied Physics Letters 111 (23), 2017 | 41 | 2017 |
| On the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substrates P Vennéguès, JM Chauveau, Z Bougrioua, T Zhu, D Martin, N Grandjean Journal of Applied Physics 112 (11), 2012 | 39 | 2012 |
| Low temperature reflectivity study of nonpolar ZnO/(Zn, Mg) O quantum wells grown on M-plane ZnO substrates L Beaur, T Bretagnon, C Brimont, T Guillet, B Gil, D Tainoff, M Teisseire, ... Applied Physics Letters 98 (10), 2011 | 38 | 2011 |
Benjamin DamilanoCRHEA-CNRSVerified email at crhea.cnrs.fr
Benjamin DamilanoCRHEA-CNRSVerified email at crhea.cnrs.fr