Jean-Michel Chauveau
Jean-Michel Chauveau
GEMAC Université Paris Saclay, Université Versailles
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Exciton radiative properties in nonpolar homoepitaxial ZnO/(Zn, Mg) O quantum wells
L Béaur, T Bretagnon, B Gil, A Kavokin, T Guillet, C Brimont, D Tainoff, ...
Physical Review B 84 (16), 165312, 2011
Benefits of homoepitaxy on the properties of nonpolar (Zn, Mg) O/ZnO quantum wells on a-plane ZnO substrates
JM Chauveau, M Teisseire, H Kim-Chauveau, C Deparis, C Morhain, ...
Applied Physics Letters 97 (8), 2010
Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy
A Hierro, JM Ulloa, JM Chauveau, A Trampert, MA Pinault, E Tournié, ...
Journal of applied physics 94 (4), 2319-2324, 2003
Non-polar a-plane ZnMgO/ZnO quantum wells grown by molecular beam epitaxy
JM Chauveau, M Laügt, P Vennegues, M Teisseire, B Lo, C Deparis, ...
Semiconductor science and technology 23 (3), 035005, 2008
Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy
JM Chauveau, Y Androussi, A Lefebvre, J Di Persio, Y Cordier
Journal of applied physics 93 (7), 4219-4225, 2003
Interface structure and anisotropic strain relaxation of nonpolar wurtzite (112¯) and (101¯) orientations: ZnO epilayers grown on sapphire
JM Chauveau, P Vennéguès, M Laügt, C Deparis, J Zuniga-Perez, ...
Journal of Applied Physics 104 (7), 2008
Nanoscale analysis of the In and N spatial redistributions upon annealing of GaInNAs quantum wells
JM Chauveau, A Trampert, KH Ploog, E Tournié
Applied physics letters 84 (14), 2503-2505, 2004
Interfacial structure and defect analysis of nonpolar ZnO films grown on R-plane sapphire by molecular beam epitaxy
P Vennéguès, JM Chauveau, M Korytov, C Deparis, J Zuniga-Perez, ...
Journal of Applied Physics 103 (8), 2008
Residual and nitrogen doping of homoepitaxial nonpolar m-plane ZnO films grown by molecular beam epitaxy
D Taïnoff, M Al-Khalfioui, C Deparis, B Vinter, M Teisseire, C Morhain, ...
Applied Physics Letters 98 (13), 2011
Growth of non-polar ZnO/(Zn, Mg) O quantum well structures on R-sapphire by plasma-assisted molecular beam epitaxy
JM Chauveau, DA Buell, M Laügt, P Vennegues, M Teisseire-Doninelli, ...
Journal of crystal growth 301, 366-369, 2007
Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells
JM Chauveau, A Trampert, KH Ploog, MA Pinault, E Tournié
Applied physics letters 82 (20), 3451-3453, 2003
Polarization-sensitive Schottky photodiodes based on a-plane ZnO/ZnMgO multiple quantum-wells
G Tabares, A Hierro, B Vinter, JM Chauveau
Applied Physics Letters 99 (7), 2011
GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm
E Tournié, MA Pinault, M Laügt, JM Chauveau, A Trampert, KH Ploog
Applied physics letters 82 (12), 1845-1847, 2003
Correlation between interface structure and light emission at 1.3–1.55 μm of (Ga, In)(N, As) diluted nitride heterostructures on GaAs substrates
A Trampert, JM Chauveau, KH Ploog, E Tournié, A Guzmán
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004
Demonstrating the decoupling regime of the electron-phonon interaction in a quantum dot using chirped optical excitation
T Kaldewey, S Lüker, AV Kuhlmann, SR Valentin, JM Chauveau, ...
Physical Review B 95 (24), 241306, 2017
Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents
A Redondo-Cubero, A Hierro, JM Chauveau, K Lorenz, G Tabares, ...
CrystEngComm 14 (5), 1637-1640, 2012
Homoepitaxy of non-polar ZnO/(Zn, Mg) O multi-quantum wells: From a precise growth control to the observation of intersubband transitions
N Le Biavan, M Hugues, M Montes Bajo, J Tamayo-Arriola, A Jollivet, ...
Applied Physics Letters 111 (23), 2017
On the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substrates
P Vennéguès, JM Chauveau, Z Bougrioua, T Zhu, D Martin, N Grandjean
Journal of Applied Physics 112 (11), 2012
Well-ordered ZnO nanowires with controllable inclination on semipolar ZnO surfaces by chemical bath deposition
T Cossuet, H Roussel, JM Chauveau, O Chaix-Pluchery, JL Thomassin, ...
Nanotechnology 29 (47), 475601, 2018
Optical determination of the effective wetting layer thickness and composition in In As∕ Ga (In) As quantum dots
M Hugues, M Teisseire, JM Chauveau, B Vinter, B Damilano, JY Duboz, ...
Physical Review B 76 (7), 075335, 2007
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