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Raymond T. Tung
Raymond T. Tung
Brooklyn College, Bell Labs
Verified email at brooklyn.cuny.edu
Title
Cited by
Cited by
Year
Electron transport at metal-semiconductor interfaces: General theory
RT Tung
Physical Review B 45 (23), 13509, 1992
17821992
Recent advances in Schottky barrier concepts
RT Tung
Materials Science and Engineering: R: Reports 35 (1-3), 1-138, 2001
14562001
The physics and chemistry of the Schottky barrier height
RT Tung
Applied Physics Reviews 1 (1), 2014
13292014
Electron transport of inhomogeneous Schottky barriers: A numerical study
JP Sullivan, RT Tung, MR Pinto, WR Graham
Journal of applied physics 70 (12), 7403-7424, 1991
8851991
Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-Ni Epitaxial Structures
RT Tung, JM Gibson, JM Poate
Physical review letters 50 (6), 429, 1983
5801983
Schottky-barrier formation at single-crystal metal-semiconductor interfaces
RT Tung
Physical review letters 52 (6), 461, 1984
5721984
Chemical bonding and Fermi level pinning at metal-semiconductor interfaces
RT Tung
Physical review letters 84 (26), 6078, 2000
4772000
Electron transport of inhomogeneous Schottky barriers
RT Tung
Applied physics letters 58 (24), 2821-2823, 1991
4431991
Formation of an electric dipole at metal-semiconductor interfaces
RT Tung
Physical review B 64 (20), 205310, 2001
3832001
Origin of the excess capacitance at intimate Schottky contacts
J Werner, AFJ Levi, RT Tung, M Anzlowar, M Pinto
Physical review letters 60 (1), 53, 1988
2831988
Electrostatic Properties of Ideal and Non‐ideal Polar Organic Monolayers: Implications for Electronic Devices
A Natan, L Kronik, H Haick, RT Tung
Advanced Materials 19 (23), 4103-4117, 2007
2672007
Schottky-barrier inhomogeneity at epitaxial interfaces on Si(100)
RT Tung, AFJ Levi, JP Sullivan, F Schrey
Physical review letters 66 (1), 72, 1991
2661991
Electron trapping, storing, and emission in nanocrystalline Si dots by capacitance–voltage and conductance–voltage measurements
S Huang, S Banerjee, RT Tung, S Oda
Journal of applied physics 93 (1), 576-581, 2003
2652003
Epitaxial silicides
RT Tung, JM Poate, JC Bean, JM Gibson, DC Jacobson
Thin Solid Films 93 (1-2), 77-90, 1982
2601982
Growth of single‐crystal CoSi2 on Si(111)
RT Tung, JC Bean, JM Gibson, JM Poate, DC Jacobson
Applied Physics Letters 40 (8), 684-686, 1982
2391982
Transistor action in Si/CoSi2/Si heterostructures
JC Hensel, AFJ Levi, RT Tung, JM Gibson
Applied physics letters 47 (2), 151-153, 1985
2351985
Oxide mediated epitaxy of CoSi2 on silicon
RT Tung
Applied Physics Letters 68 (24), 3461-3463, 1996
2321996
Growth of single crystal epitaxial silicides on silicon by the use of template layers
RT Tung, JM Gibson, JM Poate
Applied physics letters 42 (10), 888-890, 1983
1881983
Single atom self-diffusion on nickel surfaces
RT Tung, WR Graham
Surface Science 97 (1), 73-87, 1980
1871980
Control of a natural permeable CoSi2 base transistor
RT Tung, AFJ Levi, JM Gibson
Applied physics letters 48 (10), 635-637, 1986
1761986
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