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Gerald jellison
Gerald jellison
Verified email at ornl.gov
Title
Cited by
Cited by
Year
Parameterization of the optical functions of amorphous materials in the interband region
GE Jellison Jr, FA Modine
Applied Physics Letters 69 (3), 371-373, 1996
2814*1996
A stable thin‐film lithium electrolyte: lithium phosphorus oxynitride
X Yu, JB Bates, GE Jellison, FX Hart
Journal of the electrochemical society 144 (2), 524, 1997
10651997
Spectroscopic ellipsometry data analysis: measured versus calculated quantities
GE Jellison Jr
Thin solid films 313, 33-39, 1998
4301998
Data analysis for spectroscopic ellipsometry
GE Jellison
Handbook of Ellipsometry, 237-296, 2005
4282005
Optical functions of silicon determined by two-channel polarization modulation ellipsometry
GE Jellison Jr
Optical Materials 1 (1), 41-47, 1992
3721992
Optical absorption of silicon between 1.6 and 4.7 eV at elevated temperatures
GE Jellison Jr, FA Modine
Applied Physics Letters 41 (2), 180-182, 1982
3571982
Spectroscopic ellipsometry of thin film and bulk anatase
GE Jellison Jr, LA Boatner, JD Budai, BS Jeong, DP Norton
Journal of Applied Physics 93 (12), 9537-9541, 2003
3112003
Optical functions of chemical vapor deposited thin‐film silicon determined by spectroscopic ellipsometry
GE Jellison Jr, MF Chisholm, SM Gorbatkin
Applied physics letters 62 (25), 3348-3350, 1993
3101993
Magnetic behavior and spin-lattice coupling in cleavable van der Waals layered crystals
MA McGuire, G Clark, S Kc, WM Chance, GE Jellison Jr, VR Cooper, X Xu, ...
Physical Review Materials 1 (1), 014001, 2017
3082017
Wide bandgap tunability in complex transition metal oxides by site-specific substitution
WS Choi, MF Chisholm, DJ Singh, T Choi, GE Jellison Jr, HN Lee
Nature communications 3 (1), 689, 2012
2892012
Optical functions of silicon between 1.7 and 4.7 eV at elevated temperatures
GE Jellison Jr, FA Modine
Physical Review B 27 (12), 7466, 1983
2891983
Optical functions of uniaxial ZnO determined by generalized ellipsometry
GE Jellison, LA Boatner
Physical Review B 58 (7), 3586, 1998
2821998
Determinations of structure and bonding in vitreous B2O3 by means of B10, B11, and O17 NMR
GE Jellison Jr, LW Panek, PJ Bray, GB Rouse Jr
The Journal of Chemical Physics 66 (2), 802-812, 1977
2711977
Two-modulator generalized ellipsometry: theory
GE Jellison, FA Modine
Applied optics 36 (31), 8190-8198, 1997
2481997
Optical functions of silicon at elevated temperatures
GE Jellison Jr, FA Modine
Journal of Applied Physics 76 (6), 3758-3761, 1994
2381994
Optical functions of GaAs, GaP, and Ge determined by two-channel polarization modulation ellipsometry
GE Jellison Jr
Optical Materials 1 (3), 151-160, 1992
2351992
Two-modulator generalized ellipsometry: experiment and calibration
GE Jellison, FA Modine
Applied optics 36 (31), 8184-8189, 1997
2331997
Optical constants for silicon at 300 and 10 K determined from 1.64 to 4.73 eV by ellipsometry
GE Jellison, FA Modine
Journal of Applied Physics 53 (5), 3745-3753, 1982
2241982
Characterization and optimization of absorbing plasma-enhanced chemical vapor deposited antireflection coatings for silicon photovoltaics
P Doshi, GE Jellison, A Rohatgi
Applied optics 36 (30), 7826-7837, 1997
2071997
Time-resolved reflectivity measurements on silicon and germanium using a pulsed excimer KrF laser heating beam
GE Jellison Jr, DH Lowndes, DN Mashburn, RF Wood
Physical Review B 34 (4), 2407, 1986
2031986
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