Follow
Seiichi Miyazaki
Seiichi Miyazaki
Unknown affiliation
Verified email at nuee.nagoya-u.ac.jp
Title
Cited by
Cited by
Year
Photoemission study of energy-band alignments and gap-state density distributions for high-k gate dielectrics
S Miyazaki
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001
4102001
Structure and electronic states of ultrathin SiO2 thermally grown on Si (100) and Si (111) surfaces
S Miyazaki, H Nishimura, M Fukuda, L Ley, J Ristein
Applied surface science 113, 585-589, 1997
2341997
Control of self-assembling formation of nanometer silicon dots by low pressure chemical vapor deposition
S Miyazaki, Y Hamamoto, E Yoshida, M Ikeda, M Hirose
Thin Solid Films 369 (1-2), 55-59, 2000
1922000
Nanometer‐scale field‐induced oxidation of Si (111): H by a conducting‐probe scanning force microscope: Doping dependence and kinetics
T Teuschler, K Mahr, S Miyazaki, M Hundhausen, L Ley
Applied Physics Letters 67 (21), 3144-3146, 1995
1741995
Resonant tunneling through amorphous siliconsilicon nitride double-barrier structures
S Miyazaki, Y Ihara, M Hirose
Physical review letters 59 (1), 125, 1987
1691987
Characterization of high-k gate dielectric/silicon interfaces
S Miyazaki
Applied surface science 190 (1-4), 66-74, 2002
1622002
Resonant tunneling through a self-assembled Si quantum dot
M Fukuda, K Nakagawa, S Miyazaki, M Hirose
Applied physics letters 70 (17), 2291-2293, 1997
1591997
Limit of gate oxide thickness scaling in MOSFETs due to apparent threshold voltage fluctuation induced by tunnel leakage current
M Koh, W Mizubayashi, K Iwamoto, H Murakami, T Ono, M Tsuno, ...
IEEE Transactions on Electron Devices 48 (2), 259-264, 2001
1342001
Luminescence and transport in a-Si: H/a-Si1− xNx: H quantum well structures
M Hirose, S Miyazaki
Journal of Non-Crystalline Solids 66 (1-2), 327-338, 1984
1231984
Characterization of plasma-deposited microcrystalline silicon
Y Mishima, S Miyazaki, M Hirose, Y Osaka
Philosophical Magazine B 46 (1), 1-12, 1982
1231982
The role of fluorine termination in the chemical stability of HF-treated Si surfaces
T Sunada, T Yasaka, M Takakura, T Sugiyama, S Miyazaki, M Hirose
Japanese journal of applied physics 29 (12A), L2408, 1990
1091990
Analytic model of direct tunnel current through ultrathin gate oxides
K Khairurrijal, W Mizubayashi, S Miyazaki, M Hirose
Journal of Applied Physics 87 (6), 3000-3005, 2000
1082000
Memory operation of silicon quantum-dot floating-gate metal-oxide-semiconductor field-effect transistors
A Kohno, H Murakami, M Ikeda, S Miyazaki, M Hirose
Japanese Journal of Applied Physics 40 (7B), L721, 2001
1062001
Digital chemical vapor deposition and etching technologies for semiconductor processing
Y Horiike, T Tanaka, M Nakano, S Iseda, H Sakaue, A Nagata, H Shindo, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8 (3 …, 1990
951990
Photoluminescence from anodized and thermally oxidized porous germanium
S Miyazaki, K Sakamoto, K Shiba, M Hirose
Thin Solid Films 255 (1-2), 99-102, 1995
881995
Physical model of BTI, TDDB and SILC in HfO/sub 2/-based high-k gate dielectrics
K Torii, H Kitajima, T Arikado, K Shiraishi, S Miyazaki, K Yamabe, M Boero, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
842004
Chemical stability of HF-treated Si (111) surfaces
T Yasaka, K Kanda, K Sawara, SMS Miyazaki, MHM Hirose
Japanese journal of applied physics 30 (12S), 3567, 1991
781991
Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High- CMOSFETs
M Kadoshima, T Matsuki, S Miyazaki, K Shiraishi, T Chikyo, K Yamada, ...
IEEE Electron Device Letters 30 (5), 466-468, 2009
762009
Native oxidation growth on Ge (111) and (100) surfaces
SK Sahari, H Murakami, T Fujioka, T Bando, A Ohta, K Makihara, ...
Japanese Journal of Applied Physics 50 (4S), 04DA12, 2011
752011
Praseodymium silicate formed by postdeposition high-temperature annealing
A Sakai, S Sakashita, M Sakashita, Y Yasuda, S Zaima, S Miyazaki
Applied physics letters 85 (22), 5322-5324, 2004
722004
The system can't perform the operation now. Try again later.
Articles 1–20