Atsufumi Hirohata
Atsufumi Hirohata
Verified email at - Homepage
Cited by
Cited by
Review on spintronics: Principles and device applications
A Hirohata, K Yamada, Y Nakatani, IL Prejbeanu, B Diény, P Pirro, ...
Journal of Magnetism and Magnetic Materials 509, 166711, 2020
Spintronics based random access memory: a review
S Bhatti, R Sbiaa, A Hirohata, H Ohno, S Fukami, SN Piramanayagam
Materials Today 20 (9), 530-548, 2017
Opportunities and challenges for spintronics in the microelectronics industry
B Dieny, IL Prejbeanu, K Garello, P Gambardella, P Freitas, R Lehndorff, ...
Nature Electronics 3 (8), 446-459, 2020
Future perspectives for spintronic devices
A Hirohata, K Takanashi
Journal of Physics D: Applied Physics 47 (19), 193001, 2014
Heusler alloys
C Felser, A Hirohata
Springer 222 (8), 2015
Roadmap for emerging materials for spintronic device applications
A Hirohata, H Sukegawa, H Yanagihara, I Žutić, T Seki, S Mizukami, ...
IEEE Transactions on Magnetics 51 (10), 1-11, 2015
A review of methods and data to determine raw material criticality
D Schrijvers, A Hool, GA Blengini, WQ Chen, J Dewulf, R Eggert, ...
Resources, conservation and recycling 155, 104617, 2020
The 2020 magnetism roadmap
EY Vedmedenko, RK Kawakami, DD Sheka, P Gambardella, A Kirilyuk, ...
Journal of Physics D: Applied Physics 53 (45), 453001, 2020
Heusler alloys for spintronic devices: review on recent development and future perspectives
K Elphick, W Frost, M Samiepour, T Kubota, K Takanashi, H Sukegawa, ...
Science and technology of advanced materials 22 (1), 235-271, 2021
Substantial reduction of critical current for magnetization switching in an exchange-biased spin valve
Y Jiang, T Nozaki, S Abe, T Ochiai, A Hirohata, N Tezuka, K Inomata
Nature materials 3 (6), 361-364, 2004
Heusler alloy/semiconductor hybrid structures
A Hirohata, M Kikuchi, N Tezuka, K Inomata, JS Claydon, YB Xu, ...
Current Opinion in Solid State and Materials Science 10 (2), 93-107, 2006
Effective reduction of critical current for current-induced magnetization switching by a Ru layer insertion in an exchange-biased spin valve
Y Jiang, S Abe, T Ochiai, T Nozaki, A Hirohata, N Tezuka, K Inomata
Physical review letters 92 (16), 167204, 2004
Heusler-alloy films for spintronic devices
A Hirohata, J Sagar, L Lari, LR Fleet, VK Lazarov
Applied Physics A 111, 423-430, 2013
Structural and magnetic properties of epitaxial L21-structured Co2 (Cr, Fe) Al films grown on GaAs (001) substrates
A Hirohata, H Kurebayashi, S Okamura, M Kikuchi, T Masaki, T Nozaki, ...
Journal of applied physics 97 (10), 2005
Broadband ferromagnetic resonance of wires using a rectifying effect
A Yamaguchi, K Motoi, A Hirohata, H Miyajima, Y Miyashita, Y Sanada
Physical Review B 78 (10), 104401, 2008
Spin-polarized electron transport in ferromagnet/semiconductor hybrid structures induced by photon excitation
A Hirohata, YB Xu, CM Guertler, JAC Bland, SN Holmes
Physical Review B 63 (10), 104425, 2001
Magnetoresistance in tunnel junctions using full Heusler alloys
K Inomata, N Tezuka, S Okamura, H Kurebayashi, A Hirohata
Journal of applied physics 95 (11), 7234-7236, 2004
Domain wall pinning for racetrack memory using exchange bias
I Polenciuc, AJ Vick, DA Allwood, TJ Hayward, G Vallejo-Fernandez, ...
Applied Physics Letters 105 (16), 2014
Magnetoresistance of a domain wall at a submicron junction
YB Xu, CAF Vaz, A Hirohata, HT Leung, CC Yao, JAC Bland, E Cambril, ...
Physical Review B 61 (22), R14901, 2000
Room-temperature structural ordering of a Heusler compound FeSi
S Yamada, J Sagar, S Honda, L Lari, G Takemoto, H Itoh, A Hirohata, ...
Physical Review B 86 (17), 174406, 2012
The system can't perform the operation now. Try again later.
Articles 1–20