| Linear optical properties in the projector-augmented wave methodology M Gajdoš, K Hummer, G Kresse, J Furthmüller, F Bechstedt Physical Review B—Condensed Matter and Materials Physics 73 (4), 045112, 2006 | 2807 | 2006 |
| Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap VY Davydov, AA Klochikhin, RP Seisyan, VV Emtsev, SV Ivanov, ... physica status solidi (b) 229 (3), r1-r3, 2002 | 1413 | 2002 |
| Semiempirical van der Waals correction to the density functional description of solids and molecular structures F Ortmann, F Bechstedt, WG Schmidt Physical Review B—Condensed Matter and Materials Physics 73 (20), 205101, 2006 | 856 | 2006 |
| Quasiparticle band structure based on a generalized Kohn-Sham scheme F Fuchs, J Furthmüller, F Bechstedt, M Shishkin, G Kresse Physical Review B—Condensed Matter and Materials Physics 76 (11), 115109, 2007 | 633 | 2007 |
| Properties of strained wurtzite GaN and AlN: Ab initio studies JM Wagner, F Bechstedt Physical Review B 66 (11), 115202, 2002 | 557 | 2002 |
| Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral PDC King, TD Veal, F Fuchs, CY Wang, DJ Payne, A Bourlange, H Zhang, ... Physical Review B—Condensed Matter and Materials Physics 79 (20), 205211, 2009 | 528 | 2009 |
| First-principles study of ground- and excited-state properties of , , and polymorphs A Schleife, F Fuchs, J Furthmüller, F Bechstedt Physical Review B—Condensed Matter and Materials Physics 73 (24), 245212, 2006 | 498 | 2006 |
| Band gap of hexagonal InN and InGaN alloys VY Davydov, AA Klochikhin, VV Emtsev, DA Kurdyukov, SV Ivanov, ... physica status solidi (b) 234 (3), 787-795, 2002 | 449 | 2002 |
| Band Gap of InN and In‐Rich InxGa1—xN alloys (0.36 < x < 1) VY Davydov, AA Klochikhin, VV Emtsev, SV Ivanov, VV Vekshin, ... physica status solidi (b) 230 (2), R4-R6, 2002 | 436 | 2002 |
| Absolute surface energies of group-IV semiconductors: dependence on orientation and reconstruction AA Stekolnikov, J Furthmüller, F Bechstedt Physical Review B 65 (11), 115318, 2002 | 416 | 2002 |
| Principles of surface physics F Bechstedt Springer Science & Business Media, 2012 | 383 | 2012 |
| Polytypism and properties of silicon carbide F Bechstedt, P Käckell, A Zywietz, K Karch, B Adolph, K Tenelsen, ... physica status solidi (b) 202 (1), 35-62, 1997 | 377 | 1997 |
| Direct band gap wurtzite gallium phosphide nanowires S Assali, I Zardo, S Plissard, D Kriegner, MA Verheijen, G Bauer, ... Nano letters 13 (4), 1559-1563, 2013 | 362 | 2013 |
| Attracted by long-range electron correlation: adenine on graphite F Ortmann, WG Schmidt, F Bechstedt Physical review letters 95 (18), 186101, 2005 | 341 | 2005 |
| Direct-bandgap emission from hexagonal Ge and SiGe alloys EMT Fadaly, A Dijkstra, JR Suckert, D Ziss, MAJ Van Tilburg, C Mao, ... Nature 580 (7802), 205-209, 2020 | 334 | 2020 |
| Quasiparticle band structures of the antiferromagnetic transition-metal oxides MnO, FeO, CoO, and NiO C Rödl, F Fuchs, J Furthmüller, F Bechstedt Physical Review B—Condensed Matter and Materials Physics 79 (23), 235114, 2009 | 328 | 2009 |
| Optical properties of semiconductors using projector-augmented waves B Adolph, J Furthmüller, F Bechstedt Physical Review B 63 (12), 125108, 2001 | 321 | 2001 |
| Ab initio lattice dynamics of BN and AlN: Covalent versus ionic forces K Karch, F Bechstedt Physical Review B 56 (12), 7404, 1997 | 319 | 1997 |
| Indium-oxide polymorphs from first principles: Quasiparticle electronic states F Fuchs, F Bechstedt Physical Review B—Condensed Matter and Materials Physics 77 (15), 155107, 2008 | 311 | 2008 |
| Semiconductor surfaces and interfaces: their atomic and electronic structures F Bechstedt, R Enderlein De Gruyter, 1988 | 303 | 1988 |
