Cedric Huyghebaert
Cedric Huyghebaert
Black semiconductor
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Graphene and two-dimensional materials for silicon technology
D Akinwande, C Huyghebaert, CH Wang, MI Serna, S Goossens, LJ Li, ...
Nature 573 (7775), 507-518, 2019
Method for producing interconnect structures for integrated circuits
C Huyghebaert, J Vaes, J Van Olmen
US Patent 8,252,659, 2012
Graphene-based integrated photonics for next-generation datacom and telecom
M Romagnoli, V Sorianello, M Midrio, FHL Koppens, C Huyghebaert, ...
Nature Reviews Materials 3 (10), 392-414, 2018
Graphene–silicon phase modulators with gigahertz bandwidth
V Sorianello, M Midrio, G Contestabile, I Asselberghs, J Van Campenhout, ...
Nature Photonics 12 (1), 40-44, 2018
2D materials for future heterogeneous electronics
MC Lemme, D Akinwande, C Huyghebaert, C Stampfer
Nature communications 13 (1), 1392, 2022
Broadband 10 Gb/s operation of graphene electro‐absorption modulator on silicon
Y Hu, M Pantouvaki, J Van Campenhout, S Brems, I Asselberghs, ...
Laser & Photonics Reviews 10 (2), 307-316, 2016
3D stacked IC demonstration using a through silicon via first approach
J Van Olmen, A Mercha, G Katti, C Huyghebaert, J Van Aelst, E Seppala, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
High-quality, large-area MoSe 2 and MoSe 2/Bi 2 Se 3 heterostructures on AlN (0001)/Si (111) substrates by molecular beam epitaxy
E Xenogiannopoulou, P Tsipas, KE Aretouli, D Tsoutsou, SA Giamini, ...
Nanoscale 7 (17), 7896-7905, 2015
Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction tunnel-FETs
A Vandooren, D Leonelli, R Rooyackers, A Hikavyy, K Devriendt, ...
Solid-State Electronics 83, 50-55, 2013
Fabrication and Analysis of a Heterojunction Line Tunnel FET
AM Walke, A Vandooren, R Rooyackers, D Leonelli, A Hikavyy, R Loo, ...
IEEE Transactions on Electron Devices 61 (3), 707-715, 2014
2D materials: roadmap to CMOS integration
C Huyghebaert, T Schram, Q Smets, TK Agarwal, D Verreck, S Brems, ...
2018 IEEE International Electron Devices Meeting (IEDM), 22.1. 1-22.1. 4, 2018
Yield, variability, reliability, and stability of two-dimensional materials based solid-state electronic devices
M Lanza, Q Smets, C Huyghebaert, LJ Li
Nature communications 11 (1), 5689, 2020
Heavy ion implantation in Ge: Dramatic radiation induced morphology in Ge
T Janssens, C Huyghebaert, D Vanhaeren, G Winderickx, A Satta, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006
3D stacked ICs using Cu TSVs and die to wafer hybrid collective bonding
G Katti, A Mercha, J Van Olmen, C Huyghebaert, A Jourdain, M Stucchi, ...
2009 IEEE international electron devices meeting (IEDM), 1-4, 2009
Integration challenges of copper through silicon via (TSV) metallization for 3D-stacked IC integration
J Van Olmen, C Huyghebaert, J Coenen, J Van Aelst, E Sleeckx, ...
Microelectronic Engineering 88 (5), 745-748, 2011
Advancing CMOS beyond the Si roadmap with Ge and III/V devices
M Heyns, A Alian, G Brammertz, M Caymax, YC Chang, LK Chu, ...
2011 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2011
Controlled Sulfurization Process for the Synthesis of Large Area MoS2 Films and MoS2/WS2 Heterostructures
D Chiappe, I Asselberghs, S Sutar, S Iacovo, V Afanas' ev, A Stesmans, ...
Advanced Materials Interfaces 3 (4), 1500635, 2016
Impact of process and geometrical parameters on the electrical characteristics of vertical nanowire silicon n-TFETs
A Vandooren, D Leonelli, R Rooyackers, K Arstila, G Groeseneken, ...
Solid-State Electronics 72, 82-87, 2012
From the metal to the channel: A study of carrier injection through the metal/2D MoS 2 interface
G Arutchelvan, CJL de la Rosa, P Matagne, S Sutar, I Radu, ...
Nanoscale 9 (30), 10869-10879, 2017
Multilayer MoS 2 growth by metal and metal oxide sulfurization
MH Heyne, D Chiappe, J Meersschaut, T Nuytten, T Conard, H Bender, ...
Journal of Materials Chemistry C 4 (6), 1295-1304, 2016
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