Torsten Rieger
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Ga-assisted MBE growth of GaAs nanowires using thin HSQ layer
T Rieger, S Heiderich, S Lenk, MI Lepsa, D Grützmacher
Journal of Crystal Growth 353 (1), 39-46, 2012
Molecular beam epitaxy growth of GaAs/InAs core–shell nanowires and fabrication of InAs nanotubes
T Rieger, M Luysberg, T Schäpers, D Grützmacher, MI Lepsa
Nano letters 12 (11), 5559-5564, 2012
Self-catalyzed VLS grown InAs nanowires with twinning superlattices
T Grap, T Rieger, C Blömers, T Schäpers, D Grützmacher, MI Lepsa
Nanotechnology 24 (33), 335601, 2013
Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires
C Blömers, T Rieger, P Zellekens, F Haas, MI Lepsa, H Hardtdegen, ...
Nanotechnology 24 (3), 035203, 2012
Flux periodic magnetoconductance oscillations in GaAs/InAs core/shell nanowires
Ö Gül, N Demarina, C Blömers, T Rieger, H Lüth, MI Lepsa, ...
Physical Review B 89 (4), 045417, 2014
Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires
F Haas, K Sladek, A Winden, M Von der Ahe, TE Weirich, T Rieger, H Lüth, ...
Nanotechnology 24 (8), 085603, 2013
Misfit dislocation free InAs/GaSb core–shell nanowires grown by molecular beam epitaxy
T Rieger, D Grützmacher, MI Lepsa
Nanoscale 7 (1), 356-364, 2015
Controlled wurtzite inclusions in self-catalyzed zinc blende III–V semiconductor nanowires
T Rieger, MI Lepsa, T Schäpers, D Grützmacher
Journal of crystal growth 378, 506-510, 2013
Axial strain in GaAs/InAs core-shell nanowires
A Biermanns, T Rieger, G Bussone, U Pietsch, D Grützmacher, ...
Applied physics letters 102 (4), 043109, 2013
MBE growth of Al/InAs and Nb/InAs superconducting hybrid nanowire structures
NA Güsken, T Rieger, P Zellekens, B Bennemann, E Neumann, MI Lepsa, ...
Nanoscale 9 (43), 16735-16741, 2017
Crystal phase selective growth in GaAs/InAs core–shell nanowires
T Rieger, T Schäpers, D Grützmacher, MI Lepsa
Crystal Growth & Design 14 (3), 1167-1174, 2014
Crystal phase transformation in self-assembled InAs nanowire junctions on patterned Si substrates
T Rieger, D Rosenbach, D Vakulov, S Heedt, T Schäpers, ...
Nano letters 16 (3), 1933-1941, 2016
Si substrate preparation for the VS and VLS growth of InAs nanowires
T Rieger, D Grützmacher, MI Lepsa
physica status solidi (RRL)-Rapid Research Letters 7 (10), 840-844, 2013
Giant Magnetoconductance Oscillations in Hybrid Superconductor− Semiconductor Core/Shell Nanowire Devices
O Gül, HY Günel, H Lüth, T Rieger, T Wenz, F Haas, M Lepsa, ...
Nano letters 14 (11), 6269-6274, 2014
Distribution control of 1.55 μm InAs quantum dots down to small numbers on truncated InP pyramids grown by selective area metal organic vapor phase epitaxy
H Wang, J Yuan, T Rieger, PJ van Veldhoven, P Nouwens, TJ Eijkemans, ...
Applied Physics Letters 94 (14), 143103, 2009
Evolution and characteristics of GaN nanowires produced via maskless reactive ion etching
A Haab, M Mikulics, E Sutter, J Jin, T Stoica, B Kardynal, T Rieger, ...
Nanotechnology 25 (25), 255301, 2014
Silicon tunnel FET with average subthreshold slope of 55mV/dec at low drain currents
K Narimani, S Glass, T Rieger, P Bernardy, N von den Driesch, S Mantl, ...
Ultimate Integration on Silicon (EUROSOI-ULIS), 2017 Joint International …, 2017
Electron Interference in Hall Effect Measurements on GaAs/InAs Core/Shell Nanowires
F Haas, P Zellekens, M Lepsa, T Rieger, D Grützmacher, H Lüth, ...
Nano letters 17 (1), 128-135, 2016
Electronic Properties of Complex Self‐Assembled InAs Nanowire Networks
S Heedt, D Vakulov, T Rieger, D Rosenbach, S Trellenkamp, ...
Advanced Electronic Materials 2 (6), 1500460, 2016
Angle-dependent magnetotransport in GaAs/InAs core/shell nanowires
F Haas, T Wenz, P Zellekens, N Demarina, T Rieger, M Lepsa, ...
Scientific reports 6, 24573, 2016
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