Guido Groeseneken
Guido Groeseneken
imec and KU Leuven
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Cited by
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A reliable approach to charge-pumping measurements in MOS transistors
G Groeseneken, HE Maes, N Beltran, RF De Keersmaecker
IEEE Transactions on Electron Devices 31 (1), 42-53, 1984
New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
R Degraeve, G Groeseneken, R Bellens, JL Ogier, M Depas, PJ Roussel, ...
IEEE Transactions on Electron Devices 45 (4), 904-911, 1998
Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation
P Heremans, J Witters, G Groeseneken, HE Maes
IEEE transactions on Electron Devices 36 (7), 1318-1335, 1989
Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs
P Heremans, R Bellens, G Groeseneken, HE Maes
IEEE Transactions on Electron Devices 35 (12), 2194-2209, 1988
Tunnel field-effect transistor without gate-drain overlap
AS Verhulst, WG Vandenberghe, K Maex, G Groeseneken
Applied Physics Letters 91 (5), 2007
Direct and indirect band-to-band tunneling in germanium-based TFETs
KH Kao, AS Verhulst, WG Vandenberghe, B Soree, G Groeseneken, ...
IEEE Transactions on Electron Devices 59 (2), 292-301, 2011
A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides
R Degraeve, G Groeseneken, R Bellens, M Depas, HE Maes
Proceedings of International Electron Devices Meeting, 863-866, 1995
On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates
K Martens, CO Chui, G Brammertz, B De Jaeger, D Kuzum, M Meuris, ...
IEEE Transactions on Electron Devices 55 (2), 547-556, 2008
Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics
A Kerber, E Cartier, L Pantisano, R Degraeve, T Kauerauf, Y Kim, A Hou, ...
IEEE Electron Device Letters 24 (2), 87-89, 2003
Origin of NBTI variability in deeply scaled pFETs
B Kaczer, T Grasser, PJ Roussel, J Franco, R Degraeve, LA Ragnarsson, ...
2010 IEEE International Reliability Physics Symposium, 26-32, 2010
Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
M Houssa, L Pantisano, LÅ Ragnarsson, R Degraeve, T Schram, ...
Materials Science and Engineering: R: Reports 51 (4-6), 37-85, 2006
Ubiquitous relaxation in BTI stressing—New evaluation and insights
B Kaczer, T Grasser, J Roussel, J Martin-Martinez, R O'Connor, ...
2008 IEEE International Reliability Physics Symposium, 20-27, 2008
Endurance/Retention Trade-off onCap 1T1R Bipolar RRAM
YY Chen, L Goux, S Clima, B Govoreanu, R Degraeve, GS Kar, A Fantini, ...
IEEE Transactions on electron devices 60 (3), 1114-1121, 2013
Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor
AS Verhulst, B Sorée, D Leonelli, WG Vandenberghe, G Groeseneken
Journal of Applied Physics 107 (2), 2010
Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability
B Kaczer, R Degraeve, M Rasras, K Van de Mieroop, PJ Roussel, ...
IEEE Transactions on Electron Devices 49 (3), 500-506, 2002
Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification
B Kaczer, V Arkhipov, R Degraeve, N Collaert, G Groeseneken, ...
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings …, 2005
Temperature dependence of threshold voltage in thin-film SOI MOSFETs
G Groeseneken, JP Colinge, HE Maes, JC Alderman, S Holt
IEEE electron device letters 11 (8), 329-331, 1990
Balancing SET/RESET Pulse forEndurance in1T1R Bipolar RRAM
YY Chen, B Govoreanu, L Goux, R Degraeve, A Fantini, GS Kar, ...
IEEE Transactions on Electron devices 59 (12), 3243-3249, 2012
Complementary silicon-based heterostructure tunnel-FETs with high tunnel rates
AS Verhulst, WG Vandenberghe, K Maex, S De Gendt, MM Heyns, ...
IEEE electron device letters 29 (12), 1398-1401, 2008
Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction
R Degraeve, B Kaczer, G Groeseneken
Microelectronics Reliability 39 (10), 1445-1460, 1999
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