Santosh KC
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Near-unity photoluminescence quantum yield in MoS2
M Amani, DH Lien, D Kiriya, J Xiao, A Azcatl, J Noh, SR Madhvapathy, ...
Science 350 (6264), 1065-1068, 2015
Impact of intrinsic atomic defects on the electronic structure of MoS2 monolayers
KC Santosh, RC Longo, R Addou, RM Wallace, K Cho
Nanotechnology 25 (37), 375703, 2014
lll; Zhang, X.; Yablonovitch, E.; Javey, A
M Amani, DH Lien, D Kiriya, J Xiao, A Azcatl, JY Noh, SR Madhvapathy, ...
Science 350, 1065, 2015
Magnetic behavior and spin-lattice coupling in cleavable van der Waals layered crystals
MA McGuire, G Clark, S Kc, WM Chance, GE Jellison Jr, VR Cooper, X Xu, ...
Physical Review Materials 1 (1), 014001, 2017
Air Stable p-Doping of WSe2 by Covalent Functionalization
P Zhao, D Kiriya, A Azcatl, C Zhang, M Tosun, YS Liu, M Hettick, JS Kang, ...
ACS nano 8 (10), 10808-10814, 2014
Surface oxidation energetics and kinetics on MoS2 monolayer
S Kc, RC Longo, RM Wallace, K Cho
Journal of Applied Physics 117 (13), 2015
Monolayer MoS2 Bandgap Modulation by Dielectric Environments and Tunable Bandgap Transistors
J Ryou, YS Kim, S Kc, K Cho
Scientific reports 6 (1), 29184, 2016
MoS2 functionalization for ultra-thin atomic layer deposited dielectrics
A Azcatl, S McDonnell, S KC, X Peng, H Dong, X Qin, R Addou, GI Mordi, ...
Applied Physics Letters 104 (11), 2014
Unraveling the Origin of Instability in Ni-Rich LiNi1−2xCoxMnxO2 (NCM) Cathode Materials
C Liang, F Kong, RC Longo, S KC, JS Kim, SH Jeon, SA Choi, K Cho
J. Phys. Chem. C American Chemical Society DOI: 10.1021/acs.jpcc.6b00369, 2016
Charge Mediated Reversible Metal–Insulator Transition in Monolayer MoTe2 and W x Mo1–x Te2 Alloy
C Zhang, S KC, Y Nie, C Liang, WG Vandenberghe, RC Longo, Y Zheng, ...
ACS nano 10 (8), 7370-7375, 2016
Ab initio study of doping effects on LiMnO 2 and Li 2 MnO 3 cathode materials for Li-ion batteries
F Kong, RC Longo, MS Park, J Yoon, DH Yeon, JH Park, WH Wang, ...
Journal of Materials Chemistry A 3 (16), 8489-8500, 2015
HfO2 on UV–O3 exposed transition metal dichalcogenides: interfacial reactions study
A Azcatl, KC Santosh, X Peng, N Lu, S McDonnell, X Qin, F de Dios, ...
2D Materials 2 (1), 014004, 2015
In Situ TEM Characterization of Shear-Stress-Induced Interlayer Sliding in the Cross Section View of Molybdenum Disulfide
JP Oviedo, S KC, N Lu, J Wang, K Cho, RM Wallace, MJ Kim
ACS nano 9 (2), 1543-1551, 2015
Supporting Information for
RC Longo, R Addou, KC Santosh, J Noh, M Christopher
Intrinsic air stability mechanisms of two-dimensional transition metal dichalcogenide surfaces: basal versus edge oxidation
RC Longo, R Addou, KC Santosh, JY Noh, CM Smyth, D Barrera, ...
2D Materials 4 (2), 025050, 2017
Suppression of Defects and Deep Levels Using Isoelectronic Tungsten Substitution in Monolayer MoSe2
X Li, AA Puretzky, X Sang, S KC, M Tian, F Ceballos, M Mahjouri‐Samani, ...
Advanced Functional Materials 27 (19), 1603850, 2017
Phase stability of Li–Mn–O oxides as cathode materials for Li-ion batteries: insights from ab initio calculations
RC Longo, FT Kong, KC Santosh, MS Park, J Yoon, DH Yeon, JH Park, ...
Physical Chemistry Chemical Physics 16 (23), 11233-11242, 2014
Point defects in garnet-type solid electrolyte (c-Li 7 La 3 Zr 2 O 12) for Li-ion batteries
KC Santosh, RC Longo, K Xiong, K Cho
Solid State Ionics 261, 100-105, 2014
Antiferromagnetism in the van der Waals layered spin-lozenge semiconductor
MA McGuire, VO Garlea, S KC, VR Cooper, J Yan, H Cao, BC Sales
Physical Review B 95 (14), 144421, 2017
High-temperature magnetostructural transition in van der Waals-layered
MA McGuire, J Yan, P Lampen-Kelley, AF May, VR Cooper, L Lindsay, ...
Physical Review Materials 1 (6), 064001, 2017
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