| CMOS image sensors including backside illumination structure CR Moon, DH Lee, SH Cho US Patent 8,164,126, 2012 | 320 | 2012 |
| Image sensor having improved sensitivity and decreased crosstalk and method of fabricating same CR Moon, YH Lee, JW Jung, BJ Park US Patent 7,518,172, 2009 | 105 | 2009 |
| Ferroelectric characterization of highly (0001)-oriented thin films grown by chemical solution deposition WC Yi, JS Choe, CR Moon, SI Kwun, JG Yoon Applied physics letters 73 (7), 903-905, 1998 | 92 | 1998 |
| Deep trench isolation for crosstalk suppression in active pixel sensors with 1.7 µm pixel pitch BJ Park, J Jung, CR Moon, SH Hwang, YW Lee, DW Kim, KH Paik, ... Japanese journal of applied physics 46 (4S), 2454, 2007 | 74 | 2007 |
| Imprint failures and asymmetric electrical properties induced by thermal processes in epitaxial thin films BH Park, SJ Hyun, CR Moon, BD Choe, J Lee, CY Kim, W Jo, TW Noh Journal of applied physics 84 (8), 4428-4435, 1998 | 74 | 1998 |
| Advanced image sensor technology for pixel scaling down toward 1.0 µm JC Ahn, CR Moon, B Kim, K Lee, Y Kim, M Lim, W Lee, H Park, K Moon, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 72 | 2008 |
| Image sensor and method for manufacturing the same CR Moon US Patent 7,572,571, 2009 | 66 | 2009 |
| Barrier device with external reinforcement structure LJ Yodock III, LJ Yodock Jr, GC Yodock US Patent 6,666,616, 2003 | 62 | 2003 |
| Semiconductor devices, CMOS image sensors, and methods of manufacturing same DW Kwon, J Yoo, CR Moon US Patent 7,595,213, 2009 | 59 | 2009 |
| A VGA Indirect Time-of-Flight CMOS Image Sensor With 4-Tap 7- m Global-Shutter Pixel and Fixed-Pattern Phase Noise Self-Compensation MS Keel, YG Jin, Y Kim, D Kim, Y Kim, M Bae, B Chung, S Son, H Kim, ... IEEE Journal of Solid-State Circuits 55 (4), 889-897, 2019 | 50 | 2019 |
| Image sensors including conductive pixel separation structures J Koo, N Kim, C Moon, B Park, J Shin US Patent 9,524,995, 2016 | 47 | 2016 |
| Electron distribution and capacitance–voltage characteristics of n-doped quantum wells CR Moon, BD Choe, SD Kwon, HK Shin, H Lim Journal of applied physics 84 (5), 2673-2683, 1998 | 46 | 1998 |
| Application of plasma-doping (PLAD) technique to reduce dark current of CMOS image sensors CR Moon, J Jung, DW Kwon, J Yoo, DH Lee, K Kim IEEE electron device letters 28 (2), 114-116, 2007 | 45 | 2007 |
| Filter, color filter array, method of manufacturing the color filter array, and image sensor CR Moon, K Paik, DH Lee, SH Hwang US Patent 7,875,947, 2011 | 44 | 2011 |
| Image sensors including color adjustment path H Ihara, CR Moon US Patent 8,716,769, 2014 | 43 | 2014 |
| Via structures including etch-delay structures and semiconductor devices having via plugs BJ Park, CR Moon, SH Shin, SH Oh, TS Oh, JT Lee US Patent 9,728,572, 2017 | 41 | 2017 |
| A 0.8 µm smart dual conversion gain pixel for 64 megapixels CMOS image sensor with 12k e-full-well capacitance and low dark noise D Park, SW Lee, J Han, D Jang, H Kwon, S Cha, M Kim, H Lee, S Suh, ... 2019 IEEE International Electron Devices Meeting (IEDM), 16.2. 1-16.2. 4, 2019 | 37 | 2019 |
| Image sensors and methods of manufacturing image sensors S Choi, Y Park, C Hong, DL Bae, JC Ahn, CR Moon, J Koo, S Kim, HS Oh US Patent 8,570,409, 2013 | 37 | 2013 |
| 7.9 1/2.74-inch 32Mpixel-Prototype CMOS Image Sensor with 0.64μ m Unit Pixels Separated by Full-Depth Deep-Trench Isolation JE Park, S Park, K Cho, T Lee, C Lee, DH Kim, B Lee, SI Kim, HC Ji, ... 2021 IEEE International Solid-State Circuits Conference (ISSCC) 64, 122-124, 2021 | 36 | 2021 |
| A 1/2.8-inch 24Mpixel CMOS image sensor with 0.9 μm unit pixels separated by full-depth deep-trench isolation Y Kim, W Choi, D Park, H Jeoung, B Kim, Y Oh, S Oh, B Park, E Kim, ... 2018 IEEE International Solid-State Circuits Conference-(ISSCC), 84-86, 2018 | 36 | 2018 |
