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Chang-Rok Moon, Ph. D.
Chang-Rok Moon, Ph. D.
Verified email at samsung.com
Title
Cited by
Cited by
Year
CMOS image sensors including backside illumination structure
CR Moon, DH Lee, SH Cho
US Patent 8,164,126, 2012
3202012
Image sensor having improved sensitivity and decreased crosstalk and method of fabricating same
CR Moon, YH Lee, JW Jung, BJ Park
US Patent 7,518,172, 2009
1052009
Ferroelectric characterization of highly (0001)-oriented thin films grown by chemical solution deposition
WC Yi, JS Choe, CR Moon, SI Kwun, JG Yoon
Applied physics letters 73 (7), 903-905, 1998
921998
Deep trench isolation for crosstalk suppression in active pixel sensors with 1.7 µm pixel pitch
BJ Park, J Jung, CR Moon, SH Hwang, YW Lee, DW Kim, KH Paik, ...
Japanese journal of applied physics 46 (4S), 2454, 2007
742007
Imprint failures and asymmetric electrical properties induced by thermal processes in epitaxial thin films
BH Park, SJ Hyun, CR Moon, BD Choe, J Lee, CY Kim, W Jo, TW Noh
Journal of applied physics 84 (8), 4428-4435, 1998
741998
Advanced image sensor technology for pixel scaling down toward 1.0 µm
JC Ahn, CR Moon, B Kim, K Lee, Y Kim, M Lim, W Lee, H Park, K Moon, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
722008
Image sensor and method for manufacturing the same
CR Moon
US Patent 7,572,571, 2009
662009
Barrier device with external reinforcement structure
LJ Yodock III, LJ Yodock Jr, GC Yodock
US Patent 6,666,616, 2003
622003
Semiconductor devices, CMOS image sensors, and methods of manufacturing same
DW Kwon, J Yoo, CR Moon
US Patent 7,595,213, 2009
592009
A VGA Indirect Time-of-Flight CMOS Image Sensor With 4-Tap 7- m Global-Shutter Pixel and Fixed-Pattern Phase Noise Self-Compensation
MS Keel, YG Jin, Y Kim, D Kim, Y Kim, M Bae, B Chung, S Son, H Kim, ...
IEEE Journal of Solid-State Circuits 55 (4), 889-897, 2019
502019
Image sensors including conductive pixel separation structures
J Koo, N Kim, C Moon, B Park, J Shin
US Patent 9,524,995, 2016
472016
Electron distribution and capacitance–voltage characteristics of n-doped quantum wells
CR Moon, BD Choe, SD Kwon, HK Shin, H Lim
Journal of applied physics 84 (5), 2673-2683, 1998
461998
Application of plasma-doping (PLAD) technique to reduce dark current of CMOS image sensors
CR Moon, J Jung, DW Kwon, J Yoo, DH Lee, K Kim
IEEE electron device letters 28 (2), 114-116, 2007
452007
Filter, color filter array, method of manufacturing the color filter array, and image sensor
CR Moon, K Paik, DH Lee, SH Hwang
US Patent 7,875,947, 2011
442011
Image sensors including color adjustment path
H Ihara, CR Moon
US Patent 8,716,769, 2014
432014
Via structures including etch-delay structures and semiconductor devices having via plugs
BJ Park, CR Moon, SH Shin, SH Oh, TS Oh, JT Lee
US Patent 9,728,572, 2017
412017
A 0.8 µm smart dual conversion gain pixel for 64 megapixels CMOS image sensor with 12k e-full-well capacitance and low dark noise
D Park, SW Lee, J Han, D Jang, H Kwon, S Cha, M Kim, H Lee, S Suh, ...
2019 IEEE International Electron Devices Meeting (IEDM), 16.2. 1-16.2. 4, 2019
372019
Image sensors and methods of manufacturing image sensors
S Choi, Y Park, C Hong, DL Bae, JC Ahn, CR Moon, J Koo, S Kim, HS Oh
US Patent 8,570,409, 2013
372013
7.9 1/2.74-inch 32Mpixel-Prototype CMOS Image Sensor with 0.64μ m Unit Pixels Separated by Full-Depth Deep-Trench Isolation
JE Park, S Park, K Cho, T Lee, C Lee, DH Kim, B Lee, SI Kim, HC Ji, ...
2021 IEEE International Solid-State Circuits Conference (ISSCC) 64, 122-124, 2021
362021
A 1/2.8-inch 24Mpixel CMOS image sensor with 0.9 μm unit pixels separated by full-depth deep-trench isolation
Y Kim, W Choi, D Park, H Jeoung, B Kim, Y Oh, S Oh, B Park, E Kim, ...
2018 IEEE International Solid-State Circuits Conference-(ISSCC), 84-86, 2018
362018
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