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Seol Choi
Seol Choi
Unknown affiliation
Verified email at snu.ac.kr
Title
Cited by
Cited by
Year
Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
BJ Choi, DS Jeong, SK Kim, C Rohde, S Choi, JH Oh, HJ Kim, CS Hwang, ...
Journal of applied physics 98 (3), 2005
14532005
Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films
KM Kim, BJ Choi, YC Shin, S Choi, CS Hwang
Applied physics letters 91 (1), 2007
5012007
Identification of a determining parameter for resistive switching of TiO2 thin films
C Rohde, BJ Choi, DS Jeong, S Choi, JS Zhao, CS Hwang
Applied Physics Letters 86 (26), 2005
4002005
Resistive Switching in Pt∕ Al2O3∕ TiO2∕ Ru Stacked Structures
KM Kim, BJ Choi, BW Koo, S Choi, DS Jeong, CS Hwang
Electrochemical and solid-state letters 9 (12), G343, 2006
1522006
Study on the resistive switching time of TiO2 thin films
BJ Choi, S Choi, KM Kim, YC Shin, CS Hwang, SY Hwang, S Cho, S Park, ...
Applied physics letters 89 (1), 2006
1522006
Impact of the mechanical stress on switching characteristics of electrochemical resistive memory
S Ambrogio, S Balatti, S Choi, D Ielmini
Advanced Materials 26 (23), 3885-3892, 2014
1122014
Fully on-chip MAC at 14 nm enabled by accurate row-wise programming of PCM-based weights and parallel vector-transport in duration-format
P Narayanan, S Ambrogio, A Okazaki, K Hosokawa, H Tsai, A Nomura, ...
IEEE Transactions on Electron Devices 68 (12), 6629-6636, 2021
612021
Parasitic resistance reduction strategies for advanced CMOS FinFETs beyond 7nm
H Wu, O Gluschenkov, G Tsutsui, C Niu, K Brew, C Durfee, C Prindle, ...
2018 IEEE International Electron Devices Meeting (IEDM), 35.4. 1-35.4. 4, 2018
402018
An analog-AI chip for energy-efficient speech recognition and transcription
S Ambrogio, P Narayanan, A Okazaki, A Fasoli, C Mackin, K Hosokawa, ...
Nature 620 (7975), 768-775, 2023
292023
Resistance drift model for conductive-bridge (CB) RAM by filament surface relaxation
S Choi, S Ambrogio, S Balatti, F Nardi, D Ielmini
2012 4th IEEE International Memory Workshop, 1-4, 2012
222012
Size-dependent drift of resistance due to surface defect relaxation in conductive-bridge memory
S Choi, S Balatti, F Nardi, D Ielmini
IEEE electron device letters 33 (8), 1189-1191, 2012
212012
Growth and Phase Separation Behavior in Ge-Doped Sb− Te Thin Films Deposited by Combined Plasma-Enhanced Chemical Vapor and Atomic Layer Depositions
S Choi, BJ Choi, T Eom, JH Jang, W Lee, CS Hwang
The Journal of Physical Chemistry C 114 (41), 17899-17904, 2010
172010
Contact metallization for advanced CMOS technology nodes
V Kamineni, A Carr, C Niu, P Adusumilli, T Abrams, R Xiel, S Fan, J Kelly, ...
2018 IEEE International Interconnect Technology Conference (IITC), 28-29, 2018
12018
Nanosession: Electrochemical Metallization Memories
T Hasegawa, Y Itoh, T Tsuruoka, M Aono, S Tappertzhofen, I Valov, ...
Frontiers in Electronic Materials: A Collection of Extended Abstracts of the …, 2012
2012
Nanofilament relaxation model for size dependent resistance drift in electrochemical memories
S Choi, S Balatti, F Nardi, D Ielmini
Technical Digest of Frontiers in Electronic Materials, 216-217, 2012
2012
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Articles 1–15