Follow
Carlo Cagli
Carlo Cagli
CEA-LETI
Verified email at cea.fr
Title
Cited by
Cited by
Year
Self-accelerated thermal dissolution model for reset programming in unipolar resistive-switching memory (RRAM) devices
U Russo, D Ielmini, C Cagli, AL Lacaita
IEEE Transactions on Electron Devices 56 (2), 193-200, 2009
5192009
Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices
U Russo, D Ielmini, C Cagli, AL Lacaita
IEEE Transactions on Electron Devices 56 (2), 186-192, 2009
4182009
Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories
D Ielmini, F Nardi, C Cagli
Nanotechnology 22 (25), 254022, 2011
2612011
Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM
U Russo, D Ielmini, C Cagli, AL Lacaita, S Spiga, C Wiemer, M Perego, ...
2007 IEEE International Electron Devices Meeting, 775-778, 2007
2342007
Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction
C Cagli, D Ielmini, F Nardi, AL Lacaita
2008 IEEE International Electron Devices Meeting, 1-4, 2008
2152008
Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories
D Ielmini, F Nardi, C Cagli
Applied Physics Letters 96 (5), 2010
2092010
Quantum-size effects in hafnium-oxide resistive switching
S Long, X Lian, C Cagli, X Cartoixa, R Rurali, E Miranda, D Jiménez, ...
Applied Physics Letters 102 (18), 2013
1802013
Universal reset characteristics of unipolar and bipolar metal-oxide RRAM
D Ielmini, F Nardi, C Cagli
IEEE Transactions on Electron Devices 58 (10), 3246-3253, 2011
1682011
Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM
S Long, L Perniola, C Cagli, J Buckley, X Lian, E Miranda, F Pan, M Liu, ...
Scientific reports 3 (1), 2929, 2013
1672013
Modeling of set/reset operations in NiO-based resistive-switching memory devices
C Cagli, F Nardi, D Ielmini
IEEE Transactions on electron devices 56 (8), 1712-1720, 2009
1502009
Resistance transition in metal oxides induced by electronic threshold switching
D Ielmini, C Cagli, F Nardi
Applied Physics Letters 94 (6), 2009
1422009
Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories
F Nardi, D Ielmini, C Cagli, S Spiga, M Fanciulli, L Goux, DJ Wouters
Solid-State Electronics 58 (1), 42-47, 2011
1412011
A model for the set statistics of RRAM inspired in the percolation model of oxide breakdown
S Long, X Lian, C Cagli, L Perniola, E Miranda, M Liu, J Suñé
IEEE electron device letters 34 (8), 999-1001, 2013
1382013
Size-dependent retention time in NiO-based resistive-switching memories
D Ielmini, F Nardi, C Cagli, AL Lacaita
IEEE Electron Device Letters 31 (4), 353-355, 2010
1322010
Cycle-to-Cycle Intrinsic RESET Statistics in -Based Unipolar RRAM Devices
S Long, X Lian, T Ye, C Cagli, L Perniola, E Miranda, M Liu, J Sune
IEEE electron device letters 34 (5), 623-625, 2013
1242013
Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations
C Nail, G Molas, P Blaise, G Piccolboni, B Sklenard, C Cagli, M Bernard, ...
2016 IEEE International Electron Devices Meeting (IEDM), 4.5. 1-4.5. 4, 2016
1212016
Analysis and modeling of resistive switching statistics
S Long, C Cagli, D Ielmini, M Liu, J Sune
Journal of Applied Physics 111 (7), 2012
1172012
Experimental and theoretical study of electrode effects in HfO2 based RRAM
C Cagli, J Buckley, V Jousseaume, T Cabout, A Salaun, H Grampeix, ...
2011 International Electron Devices Meeting, 28.7. 1-28.7. 4, 2011
1082011
Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures
P Calka, E Martinez, V Delaye, D Lafond, G Audoit, D Mariolle, ...
Nanotechnology 24 (8), 085706, 2013
912013
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices
D Ielmini, S Spiga, F Nardi, C Cagli, A Lamperti, E Cianci, M Fanciulli
Journal of Applied Physics 109 (3), 2011
852011
The system can't perform the operation now. Try again later.
Articles 1–20