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Dushyant Tomer
Dushyant Tomer
Intel Co.
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Cited by
Cited by
Year
Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions
D Tomer, S Rajput, LJ Hudy, CH Li, L Li
Nanotechnology 26 (21), 215702, 2015
552015
Carrier transport in reverse-biased graphene/semiconductor Schottky junctions
D Tomer, S Rajput, LJ Hudy, CH Li, L Li
Applied physics letters 106 (17), 2015
442015
Intrinsic inhomogeneity in barrier height at monolayer graphene/SiC Schottky junction
D Tomer, S Rajput, LJ Hudy, CH Li, L Li
Applied Physics Letters 105 (2), 2014
322014
Spiral growth of few-layer MoS2 by chemical vapor deposition
CHLLL X. Dong, C. Yan, D. Tomer
Applied physics letters, 051604, 2016
302016
Spatial inhomogeneity in Schottky barrier height at graphene/MoS2 Schottky junctions
LL D. Tomer, S. Rajput
J. Phys. D: Appl. Phys. 50, 165301, 2017
212017
A Phase Change Material for Reconfigurable Circuit Applications
D Tomer, RA Coutu
Applied Sciences 8 (1), 130, 2018
92018
Micro-Contacts Testing using a Micro-Force Sensor Compatible with Biological Systems
R Coutu, D Tomer
International Journal of Biosensors & Bioelectronics 3 (1), 52-60, 2017
42017
Experimental Validation of External Load Effects for Micro-Contacts under Low Frequency, Low Amplitude Alternating Current (AC) Test Conditions
P Mahanta, RA Coutu Jr., D Tomer
MPDI Technologies 2018, 6 (46), 2018
32018
Transport and photoconduction characteristics of metal-graphene-4H-SiC (0001) heterojunction devices
T Hosseini, D Tomer, S Rajput, L Li, N Kouklin
Applied Physics Letters 105 (22), 2014
22014
Spatial inhomogeneous barrier heights at graphene/semiconductor Schottky junctions
D Tomer
The University of Wisconsin-Milwaukee, 2016
2016
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