| In-memory computing with resistive switching devices D Ielmini, HSP Wong Nature electronics 1 (6), 333-343, 2018 | 1403 | 2018 |
| Phase change materials and their application to nonvolatile memories S Raoux, W Wełnic, D Ielmini Chemical reviews 110 (1), 240-267, 2010 | 892 | 2010 |
| Resistive switching memories based on metal oxides: mechanisms, reliability and scaling D Ielmini Semiconductor Science and Technology 31 (6), 063002, 2016 | 839 | 2016 |
| Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices D Ielmini, Y Zhang Journal of Applied Physics 102 (5), 2007 | 642 | 2007 |
| Modeling the universal set/reset characteristics of bipolar RRAM by field-and temperature-driven filament growth D Ielmini IEEE Transactions on Electron Devices 58 (12), 4309-4317, 2011 | 588 | 2011 |
| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 537 | 2019 |
| Resistive switching: from fundamentals of nanoionic redox processes to memristive device applications D Ielmini, R Waser John Wiley & Sons, 2015 | 522 | 2015 |
| Resistive switching by voltage-driven ion migration in bipolar RRAM—Part II: Modeling S Larentis, F Nardi, S Balatti, DC Gilmer, D Ielmini IEEE Transactions on Electron Devices 59 (9), 2468-2475, 2012 | 518 | 2012 |
| Self-accelerated thermal dissolution model for reset programming in unipolar resistive-switching memory (RRAM) devices U Russo, D Ielmini, C Cagli, AL Lacaita IEEE Transactions on Electron Devices 56 (2), 193-200, 2009 | 504 | 2009 |
| Reliability study of phase-change nonvolatile memories A Pirovano, A Redaelli, F Pellizzer, F Ottogalli, M Tosi, D Ielmini, ... IEEE Transactions on Device and Materials Reliability 4 (3), 422-427, 2004 | 502 | 2004 |
| Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices U Russo, D Ielmini, C Cagli, AL Lacaita IEEE Transactions on Electron Devices 56 (2), 186-192, 2009 | 409 | 2009 |
| Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses D Ielmini Physical Review B 78 (3), 035308, 2008 | 374 | 2008 |
| Study of multilevel programming in programmable metallization cell (PMC) memory U Russo, D Kamalanathan, D Ielmini, AL Lacaita, MN Kozicki IEEE transactions on electron devices 56 (5), 1040-1047, 2009 | 368 | 2009 |
| Electronic switching effect and phase-change transition in chalcogenide materials A Redaelli, A Pirovano, F Pellizzer, AL Lacaita, D Ielmini, R Bez IEEE Electron Device Letters 25 (10), 684-686, 2004 | 356 | 2004 |
| Recovery and drift dynamics of resistance and threshold voltages in phase-change memories D Ielmini, AL Lacaita, D Mantegazza IEEE Transactions on Electron Devices 54 (2), 308-315, 2007 | 319 | 2007 |
| Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories D Ielmini, F Nardi, C Cagli Nanotechnology 22 (25), 254022, 2011 | 258 | 2011 |
| Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks D Ielmini Microelectronic Engineering 190, 44-53, 2018 | 251 | 2018 |
| Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability S Ambrogio, S Balatti, A Cubeta, A Calderoni, N Ramaswamy, D Ielmini IEEE Transactions on electron devices 61 (8), 2912-2919, 2014 | 251 | 2014 |
| Neuromorphic learning and recognition with one-transistor-one-resistor synapses and bistable metal oxide RRAM S Ambrogio, S Balatti, V Milo, R Carboni, ZQ Wang, A Calderoni, ... IEEE Transactions on Electron Devices 63 (4), 1508-1515, 2016 | 234 | 2016 |
| Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM U Russo, D Ielmini, C Cagli, AL Lacaita, S Spiga, C Wiemer, M Perego, ... 2007 IEEE International Electron Devices Meeting, 775-778, 2007 | 230 | 2007 |
Simone BalattiApplied MaterialsVerified email at amat.com
