Maya Narayanan Kutty
Maya Narayanan Kutty
Postdoctoral Research Fellow, Centre for High Technology Materials, University of New Mexico
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Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers
N Gautam, HS Kim, MN Kutty, E Plis, LR Dawson, S Krishna
Applied Physics Letters 96 (23), 2010
Passivation techniques for InAs/GaSb strained layer superlattice detectors
EA Plis, MN Kutty, S Krishna
Laser & Photonics Reviews 7 (1), 45-59, 2013
Varshni parameters for InAs/GaSb strained layer superlattice infrared photodetectors
B Klein, E Plis, MN Kutty, N Gautam, A Albrecht, S Myers, S Krishna
Journal of Physics D: Applied Physics 44 (7), 075102, 2011
Lateral diffusion of minority carriers in InAsSb-based nBn detectors
E Plis, S Myers, MN Kutty, J Mailfert, EP Smith, S Johnson, S Krishna
Applied Physics Letters 97 (12), 2010
Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices
GA Umana-Membreno, B Klein, H Kala, J Antoszewski, N Gautam, ...
Applied Physics Letters 101 (25), 2012
GaSb quantum-well-based “buffer-free” vertical light emitting diode monolithically embedded within a GaAs cavity incorporating interfacial misfit arrays
M Mehta, G Balakrishnan, S Huang, A Khoshakhlagh, A Jallipalli, P Patel, ...
Applied physics letters 89 (21), 2006
Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors
E Plis, MN Kutty, S Myers, HS Kim, N Gautam, LR Dawson, S Krishna
Infrared Physics & Technology 54 (3), 252-257, 2011
1.54 Ám GaSb/AlGaSb multi-quantum-well monolithic laser at 77 K grown on miscut Si substrate using interfacial misfit arrays
A Jallipalli, MN Kutty, G Balakrishnan, J Tatebayashi, N Nuntawong, ...
Electronics letters 43 (22), 1198-1199, 2007
Room-Temperature Operation of Buffer-Free GaSb–AlGaSb Quantum-Well Diode Lasers Grown on a GaAs Platform Emitting at 1.65m
M Mehta, A Jallipalli, J Tatebayashi, MN Kutty, A Albrecht, G Balakrishnan, ...
IEEE Photonics Technology Letters 19 (20), 1628-1630, 2007
Band engineered HOT midwave infrared detectors based on type-II InAs/GaSb strained layer superlattices
N Gautam, S Myers, AV Barve, B Klein, EP Smith, D Rhiger, E Plis, ...
Infrared physics & technology 59, 72-77, 2013
Study of surface treatments on InAs/GaSb superlattice lwir detectors
MN Kutty, E Plis, A Khoshakhlagh, S Myers, N Gautam, S Smolev, ...
Journal of Electronic Materials 39, 2203-2209, 2010
Room-temperature lasing at 1.82 μm of GaInSb∕ AlGaSb quantum wells grown on GaAs substrates using an interfacial misfit array
J Tatebayashi, A Jallipalli, MN Kutty, SH Huang, G Balakrishnan, ...
Applied Physics Letters 91 (14), 2007
Mid-wavelength InAsSb detectors based on nBn design
A Khoshakhlagh, S Myers, E Plis, MN Kutty, B Klein, N Gautam, H Kim, ...
Infrared Technology and Applications XXXVI 7660, 948-954, 2010
Monolithically integrated III-Sb-based laser diodes grown on miscut Si substrates
J Tatebayashi, A Jallipalli, MN Kutty, S Huang, K Nunna, G Balakrishnan, ...
IEEE Journal of Selected Topics in Quantum Electronics 15 (3), 716-723, 2009
Investigation of multistack InAs/InGaAs/GaAs self-assembled quantum dots-in-double-well structures for infrared detectors
YD Sharma, MN Kutty, RV Shenoi, AV Barve, S Myers, J Shao, E Plis, ...
Journal of Vacuum Science & Technology B 28 (3), C3G1-C3G7, 2010
Performance improvement of long-wave infrared InAs/GaSb strained-layer superlattice detectors through sulfur-based passivation
EA Plis, MN Kutty, S Myers, A Rathi, EH Aifer, I Vurgaftman, S Krishna
Infrared Physics & Technology 55 (2-3), 216-219, 2012
Heterostructure band engineering of type-II InAs/GaSb superlattice based longwave infrared photodiodes using unipolar current blocking barriers
N Gautam, E Plis, HS Kim, MN Kutty, S Myers, A Khoshakhlagh, ...
Infrared Technology and Applications XXXVI 7660, 572-577, 2010
Comparison of superlattice based dual color nBn and pBp infrared detectors
S Myers, E Plis, C Morath, V Cowan, N Gautam, B Klein, MN Kutty, ...
Infrared Sensors, Devices, and Applications; and Single Photon Imaging IIá…, 2011
Fabrication and characteristics of broad-area light-emitting diode based on nanopatterned quantum dots
PS Wong, BL Liang, J Tatebayashi, L Xue, N Nuntawong, MN Kutty, ...
Nanotechnology 20 (3), 035302, 2008
Compensation of interfacial states located inside the “buffer-free” GaSb/GaAs (001) heterojunction via δ-doping
A Jallipalli, K Nunna, MN Kutty, G Balakrishnan, GB Lush, LR Dawson, ...
Applied Physics Letters 95 (7), 2009
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