| Material challenges for solar cells in the twenty-first century: directions in emerging technologies S Almosni, A Delamarre, Z Jehl, D Suchet, L Cojocaru, M Giteau, ... Science and Technology of advanced MaTerialS 19 (1), 336-369, 2018 | 279 | 2018 |
| Influence of band-structure on electron ballistic transport in Silicon nanowire MOSFET's: an atomistic study K Nehari, N Cavassilas, JL Autran, M Bescond, D Munteanu, M Lannoo Proceedings of 35th European Solid-State Device Research Conference, 2005 …, 2005 | 146 | 2005 |
| Flexible photodiodes based on nitride core/shell p–n junction nanowires H Zhang, X Dai, N Guan, A Messanvi, V Neplokh, V Piazza, M Vallo, ... ACS applied materials & interfaces 8 (39), 26198-26206, 2016 | 88 | 2016 |
| Effective-mass approach for n-type semiconductor nanowire MOSFETs arbitrarily oriented M Bescond, N Cavassilas, M Lannoo Nanotechnology 18 (25), 255201, 2007 | 84 | 2007 |
| 3D quantum modeling and simulation of multiple-gate nanowire MOSFETs M Bescond, K Nehari, JL Autran, N Cavassilas, D Munteanu, M Lannoo IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 82 | 2004 |
| Energy-band structure in strained silicon: A 20-band and Bir–Pikus Hamiltonian model S Richard, F Aniel, G Fishman, N Cavassilas Journal of applied physics 94 (3), 1795-1799, 2003 | 77 | 2003 |
| Energy-band structure of GaAs and Si: A sps* k⋅ p method N Cavassilas, F Aniel, K Boujdaria, G Fishman Physical Review B 64 (11), 115207, 2001 | 59 | 2001 |
| Modeling of nanoscale solar cells: The Green's function formalism N Cavassilas, F Michelini, M Bescond Journal of Renewable and Sustainable Energy 6 (1), 2014 | 53 | 2014 |
| Full-band study of current across silicon nanowire transistors K Nehari, N Cavassilas, F Michelini, M Bescond, JL Autran, M Lannoo Applied physics letters 90 (13), 2007 | 53 | 2007 |
| Strained silicon on SiGe: Temperature dependence of carrier effective masses S Richard, N Cavassilas, F Aniel, G Fishman Journal of applied physics 94 (8), 5088-5094, 2003 | 45 | 2003 |
| Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs M Bescond, N Cavassilas, K Kalna, K Nehari, L Raymond, JL Autran, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 42 | 2005 |
| Inelastic scattering in nanoscale devices: One-shot current-conserving lowest-order approximation H Mera, M Lannoo, C Li, N Cavassilas, M Bescond Physical Review B—Condensed Matter and Materials Physics 86 (16), 161404, 2012 | 36 | 2012 |
| Capacitance-voltage characteristics of metal-oxide-strained semiconductor Si/SiGe heterostructures N Cavassilas, JL Autran Nanotech 2002 1, 600-603, 2002 | 30 | 2002 |
| Multiband quantum transport simulations of ultimate p-type double-gate transistors: Effects of hole-phonon scattering N Cavassilas, F Michelini, M Bescond Journal of Applied Physics 109 (7), 2011 | 29 | 2011 |
| Efficient quantum modeling of inelastic interactions in nanodevices Y Lee, M Lannoo, N Cavassilas, M Luisier, M Bescond Physical Review B 93 (20), 205411, 2016 | 26 | 2016 |
| Modeling of phonon scattering in n-type nanowire transistors using one-shot analytic continuation technique M Bescond, C Li, H Mera, N Cavassilas, M Lannoo Journal of Applied Physics 114 (15), 2013 | 25 | 2013 |
| Anharmonic phonon-phonon scattering modeling of three-dimensional atomistic transport: An efficient quantum treatment Y Lee, M Bescond, D Logoteta, N Cavassilas, M Lannoo, M Luisier Physical Review B 97 (20), 205447, 2018 | 23 | 2018 |
| Comprehensive analyses of core–shell InGaN/GaN single nanowire photodiodes H Zhang, N Guan, V Piazza, A Kapoor, C Bougerol, FH Julien, ... Journal of Physics D: Applied Physics 50 (48), 484001, 2017 | 21 | 2017 |
| One-shot current conserving quantum transport modeling of phonon scattering in n-type double-gate field-effect-transistors N Cavassilas, M Bescond, H Mera, M Lannoo Applied Physics Letters 102 (1), 2013 | 21 | 2013 |
| Tight-binding calculations of Ge-nanowire bandstructures M Bescond, N Cavassilas, K Nehari, M Lannoo Journal of Computational Electronics 6 (1), 341-344, 2007 | 21 | 2007 |
Marc BescondIM2NP - CNRS - Aix-Marseille UniversityVerified email at im2np.fr
