Weinan Lin (林伟南)
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Symmetry-dependent field-free switching of perpendicular magnetization
L Liu, C Zhou, X Shu, C Li, T Zhao, W Lin, J Deng, Q Xie, S Chen, J Zhou, ...
Nature Nanotechnology 16 (3), 277-282, 2021
Current-induced magnetization switching in all-oxide heterostructures
L Liu#, Q Qin#, W Lin#, C Li, Q Xie, S He, X Shu, C Zhou, Z Lim, J Yu, ...
Nature Nanotechnology, 1-6, 2019
Emergence of Topological Hall Effect in a SrRuO3 Single Layer
Q Qin#, L Liu#, W Lin#, X Shu, Q Xie, Z Lim, C Li, S He, GM Chow, J Chen
Advanced Materials 31 (8), 1807008, 2019
Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation
HY Peng, YF Li, WN Lin, YZ Wang, XY Gao, T Wu
Scientific reports 2, 442, 2012
Nonvolatile Resistive Switching in Heterostructures
S Wu, X Luo, S Turner, H Peng, W Lin, J Ding, A David, B Wang, ...
Physical Review X 3 (4), 041027, 2013
Continuously controllable photoconductance in freestanding BiFeO3 by the macroscopic flexoelectric effect
R Guo, L You, W Lin, A Abdelsamie, X Shu, G Zhou, S Chen, L Liu, X Yan, ...
Nature communications 11 (1), 2571, 2020
Control of synaptic plasticity learning of ferroelectric tunnel memristor by nanoscale interface engineering
R Guo, Y Zhou, L Wu, Z Wang, Z Lim, X Yan, W Lin, H Wang, HY Yoong, ...
ACS applied materials & interfaces 10 (15), 12862-12869, 2018
Ferroic tunnel junctions and their application in neuromorphic networks
R Guo#, W Lin#, X Yan#, T Venkatesan, J Chen
Applied Physics Reviews 7 (1), 011304, 2020
Multi‐nonvolatile state resistive switching arising from ferroelectricity and oxygen vacancy migration
W Lü, C Li, L Zheng, J Xiao, W Lin, Q Li, XR Wang, Z Huang, S Zeng, ...
Advanced Materials 29 (24), 1606165, 2017
Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit
H Wang, ZR Liu, HY Yoong, TR Paudel, JX Xiao, R Guo, WN Lin, P Yang, ...
Nature communications 9 (1), 3319, 2018
Electrostatic modulation of LaAlO 3/SrTiO 3 interface transport in an electric double-layer transistor
WN Lin, JF Ding, SX Wu, YF Li, J Lourembam, S Shannigrahi, SJ Wang, ...
Advanced Materials Interfaces 1 (1), 1300001, 2013
Electrical switching of perpendicular magnetization in a single ferromagnetic layer
L Liu, J Yu, R González-Hernández, C Li, J Deng, W Lin, C Zhou, T Zhou, ...
Physical Review B 101 (22), 220402, 2020
Large spin-orbit torque efficiency enhanced by magnetic structure of collinear antiferromagnet IrMn
J Zhou, X Wang, Y Liu, J Yu, H Fu, L Liu, S Chen, J Deng, W Lin, X Shu, ...
Science advances 5 (5), eaau6696, 2019
Giant Enhancements of Perpendicular Magnetic Anisotropy and Spin‐Orbit Torque by a MoS2 Layer
Q Xie#, W Lin#, B Yang#, X Shu, S Chen, L Liu, X Yu, MBH Breese, ...
Advanced Materials 31 (21), 1900776, 2019
Interface-based tuning of Rashba spin-orbit interaction in asymmetric oxide heterostructures with 3 d electrons
W Lin, L Li, F Doğan, C Li, H Rotella, X Yu, B Zhang, Y Li, WS Lew, ...
Nature communications 10 (1), 3052, 2019
Electrostatic tuning of Kondo effect in a rare-earth-doped wide-band-gap oxide
Y Li, R Deng, W Lin, Y Tian, H Peng, J Yi, B Yao, T Wu
Physical Review B 87 (15), 155151, 2013
Photoinduced modulation and relaxation characteristics in LaAlO3/SrTiO3 heterointerface
KX Jin, W Lin, BC Luo, T Wu
Scientific reports 5, 8778, 2015
Anomalous exchange bias at collinear/noncollinear spin interface
YF Tian, JF Ding, WN Lin, ZH Chen, A David, M He, WJ Hu, L Chen, T Wu
Scientific reports 3, 1094, 2013
Free field electric switching of perpendicularly magnetized thin film by spin current gradient
S Chen, J Yu, Q Xie, X Zhang, W Lin, L Liu, J Zhou, X Shu, R Guo, ...
ACS applied materials & interfaces, 2019
Spin–Orbit Torque‐Induced Domain Nucleation for Neuromorphic Computing
J Zhou, T Zhao, X Shu, L Liu, W Lin, S Chen, S Shi, X Yan, X Liu, J Chen
Advanced Materials 33 (36), 2103672, 2021
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