Atif Noori
Atif Noori
Applied Materials, UCLA, Northrop Grumman Space Technology, emberlight, Amazon Technologies
Verified email at
Cited by
Cited by
Deposition of metal films using alane-based precursors
X Lu, D Thompson, JW Anthis, M Chang, S Ganguli, W Tang, S Gandikota, ...
US Patent 8,927,059, 2015
Methods for depositing fluorine/carbon-free conformal tungsten
X Fu, S Gandikota, AV Gelatos, A Noori, M Chang, D Thompson, ...
US Patent 9,230,815, 2016
Methods of fabricating dielectric films from metal amidinate precursors
S Hung, A Noori, D Thompson, Y Senzaki
US Patent 9,269,574, 2016
Deposition of N-metal films comprising aluminum alloys
S Gandikota, X Lu, SC Chen, W Tang, J Zhou, S Ganguli, D Thompson, ...
US Patent 9,145,612, 2015
System and method for light socket adaptation
AM Noori, GWY Kwan, K Rohling, KD Wolfe, LW Wolfe, S Arnold
US Patent 9,526,153, 2016
HKMG process impact on N, P BTI: Role of thermal IL scaling, IL/HK integration and post HK nitridation
K Joshi, S Hung, S Mukhopadhyay, V Chaudhary, N Nanaware, ...
2013 IEEE international reliability physics symposium (IRPS), 4C. 2.1-4C. 2.10, 2013
Method of forming non-volatile memory having charge trap layer with compositional gradient
M Balseanu, V Zubkov, LQ Xia, A Noori, R Arghavani, DR Witty, ...
US Patent 7,816,205, 2010
Manufacturable Processes for32-nm-node CMOS Enhancement by Synchronous Optimization of Strain-Engineered Channel and External Parasitic Resistances
AM Noori, M Balseanu, P Boelen, A Cockburn, S Demuynck, S Felch, ...
IEEE transactions on electron devices 55 (5), 1259-1264, 2008
Materials issues for the heterogeneous integration of III-V compounds: Exfoliation and layer transfer
S Hayashi, M Goorsky, A Noori, D Bruno
Journal of the Electrochemical Society 153 (12), G1011, 2006
Growth characteristics and film properties of cerium dioxide prepared by plasma-enhanced atomic layer deposition
WH Kim, MK Kim, WJ Maeng, J Gatineau, V Pallem, C Dussarrat, A Noori, ...
Journal of The Electrochemical Society 158 (8), G169, 2011
The effect of La2O3-incorporation in HfO2 dielectrics on Ge substrate by atomic layer deposition
I Oh, MK Kim, J Lee, CW Lee, C Lansalot-Matras, W Noh, J Park, A Noori, ...
Applied surface science 287, 349-354, 2013
Atomic layer deposition methods for metal gate electrodes
Y Lei, S Gandikota, X Fu, W Tang, A Noori
US Patent 9,082,702, 2015
Method of forming a non-volatile memory having a silicon nitride charge trap layer
M Balseanu, V Zubkov, LQ Xia, A Noori, R Arghavani, DR Witty, ...
US Patent 8,252,653, 2012
Surface roughness and dislocation distribution in compositionally graded relaxed SiGe buffer layer with inserted-strained Si layers
TS Yoon, J Liu, AM Noori, MS Goorsky, YH Xie
Applied Physics Letters 87 (1), 2005
Effective work function engineering for aggressively scaled planar and multi-gate fin field-effect transistor-based devices with high-k last replacement metal gate technology
A Veloso, SA Chew, Y Higuchi, LÅ Ragnarsson, E Simoen, T Schram, ...
Japanese Journal of Applied Physics 52 (4S), 04CA02, 2013
Significant Enhancement of the Dielectric Constant through the Doping of CeO2 into HfO2 by Atomic Layer Deposition
WH Kim, MK Kim, IK Oh, WJ Maeng, T Cheon, SH Kim, A Noori, ...
Journal of the American Ceramic Society 97 (4), 1164-1169, 2014
Uv curing of pecvd-deposited sacrificial polymer films for air-gap ild
A Noori, F Schmitt, A Lakshmanan, BH Kim, R Arghavani
US Patent App. 12/017,879, 2008
Full-field EUV and immersion lithography integration in 0.186μm2 FinFET 6T-SRAM cell
A Veloso, S Demuynck, M Ercken, AM Goethals, M Demand, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
Methods for depositing fluorine/carbon-free conformal tungsten
X Fu, S Gandikota, AV Gelatos, A Noori, M Chang, D Thompson, ...
US Patent 9,601,339, 2017
Accelerated relaxation of strain-relaxed epitaxial buffers by use of integrated or stand-alone thermal processing
ST Srinivasan, AM Noori, DK Carlson
US Patent 9,443,728, 2016
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