| Equivalent-accuracy accelerated neural-network training using analogue memory S Ambrogio, P Narayanan, H Tsai, RM Shelby, I Boybat, C Di Nolfo, ... Nature 558 (7708), 60-67, 2018 | 1105 | 2018 |
| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 630 | 2019 |
| Emerging neuromorphic devices D Ielmini, S Ambrogio Nanotechnology 31 (9), 092001, 2019 | 289 | 2019 |
| Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability S Ambrogio, S Balatti, A Cubeta, A Calderoni, N Ramaswamy, D Ielmini IEEE Transactions on electron devices 61 (8), 2912-2919, 2014 | 281 | 2014 |
| Neuromorphic learning and recognition with one-transistor-one-resistor synapses and bistable metal oxide RRAM S Ambrogio, S Balatti, V Milo, R Carboni, ZQ Wang, A Calderoni, ... IEEE Transactions on Electron Devices 63 (4), 1508-1515, 2016 | 253 | 2016 |
| Unsupervised learning by spike timing dependent plasticity in phase change memory (PCM) synapses S Ambrogio, N Ciocchini, M Laudato, V Milo, A Pirovano, P Fantini, ... Frontiers in neuroscience 10, 56, 2016 | 249 | 2016 |
| Recent progress in analog memory-based accelerators for deep learning H Tsai, S Ambrogio, P Narayanan, RM Shelby, GW Burr Journal of Physics D: Applied Physics 51 (28), 283001, 2018 | 223 | 2018 |
| Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity G Pedretti, V Milo, S Ambrogio, R Carboni, S Bianchi, A Calderoni, ... Scientific reports 7 (1), 5288, 2017 | 176 | 2017 |
| Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches S Ambrogio, S Balatti, DC Gilmer, D Ielmini IEEE Transactions on Electron Devices 61 (7), 2378-2386, 2014 | 165 | 2014 |
| True random number generation by variability of resistive switching in oxide-based devices S Balatti, S Ambrogio, Z Wang, D Ielmini IEEE Journal on Emerging and Selected Topics in Circuits and Systems 5 (2 …, 2015 | 145 | 2015 |
| Statistical Fluctuations in HfOx Resistive-Switching Memory: Part II—Random Telegraph Noise S Ambrogio, S Balatti, A Cubeta, A Calderoni, N Ramaswamy, D Ielmini IEEE Transactions on Electron Devices 61 (8), 2920-2927, 2014 | 143 | 2014 |
| Physical unbiased generation of random numbers with coupled resistive switching devices S Balatti, S Ambrogio, R Carboni, V Milo, Z Wang, A Calderoni, ... IEEE Transactions on Electron Devices 63 (5), 2029-2035, 2016 | 134 | 2016 |
| Spike-timing dependent plasticity in a transistor-selected resistive switching memory S Ambrogio, S Balatti, F Nardi, S Facchinetti, D Ielmini Nanotechnology 24 (38), 384012, 2013 | 134 | 2013 |
| Ultrafast valley relaxation dynamics in monolayer probed by nonequilibrium optical techniques S Dal Conte, F Bottegoni, EAA Pogna, D De Fazio, S Ambrogio, I Bargigia, ... Physical Review B 92 (23), 235425, 2015 | 125 | 2015 |
| Voltage-Controlled Cycling Endurance of HfOx-Based Resistive-Switching Memory S Balatti, S Ambrogio, Z Wang, S Sills, A Calderoni, N Ramaswamy, ... IEEE Transactions on Electron Devices 62 (10), 3365-3372, 2015 | 120 | 2015 |
| Impact of the mechanical stress on switching characteristics of electrochemical resistive memory S Ambrogio, S Balatti, S Choi, D Ielmini Advanced Materials 26 (23), 3885-3892, 2014 | 118 | 2014 |
| A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems Z Wang, S Ambrogio, S Balatti, D Ielmini Frontiers in neuroscience 8, 438, 2015 | 108 | 2015 |
| Normally-off logic based on resistive switches—Part I: Logic gates S Balatti, S Ambrogio, D Ielmini IEEE transactions on Electron Devices 62 (6), 1831-1838, 2015 | 93 | 2015 |
| Demonstration of hybrid CMOS/RRAM neural networks with spike time/rate-dependent plasticity V Milo, G Pedretti, R Carboni, A Calderoni, N Ramaswamy, S Ambrogio, ... 2016 IEEE International Electron Devices Meeting (IEDM), 16.8. 1-16.8. 4, 2016 | 89 | 2016 |
| Understanding switching variability and random telegraph noise in resistive RAM S Ambrogio, S Balatti, A Cubeta, A Calderoni, N Ramaswamy, D Ielmini Electron Devices Meeting (IEDM), 2013 IEEE International, 31.5. 1-31.5. 4, 2013 | 88 | 2013 |
Daniele IelminiProfessor of ElectronicsVerified email at elet.polimi.it
