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Kiroubanand Sankaran
Kiroubanand Sankaran
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Cited by
Year
Electronic properties of hydrogenated silicene and germanene
M Houssa, E Scalise, K Sankaran, G Pourtois, VV Afanas’Ev, A Stesmans
Applied Physics Letters 98 (22), 2011
5132011
Thickness dependence of the resistivity of platinum-group metal thin films
S Dutta, K Sankaran, K Moors, G Pourtois, S Van Elshocht, J Bömmels, ...
Journal of Applied Physics 122 (2), 2017
1982017
band gap of ZnO: Effects of plasmon-pole models
M Stankovski, G Antonius, D Waroquiers, A Miglio, H Dixit, K Sankaran, ...
Physical Review B—Condensed Matter and Materials Physics 84 (24), 241201, 2011
1292011
First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism
S Clima, YY Chen, R Degraeve, M Mees, K Sankaran, B Govoreanu, ...
Applied Physics Letters 100 (13), 2012
1012012
Alternative metals for advanced interconnects
C Adelmann, LG Wen, AP Peter, YK Siew, K Croes, J Swerts, M Popovici, ...
IEEE International Interconnect Technology Conference, 173-176, 2014
922014
Field-driven ultrafast sub-ns programming in W\Al2O3\Ti\CuTe-based 1T1R CBRAM system
L Goux, K Sankaran, G Kar, N Jossart, K Opsomer, R Degraeve, ...
2012 Symposium on VLSI Technology (VLSIT), 69-70, 2012
642012
BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap
J Swerts, S Mertens, T Lin, S Couet, Y Tomczak, K Sankaran, G Pourtois, ...
Applied Physics Letters 106 (26), 2015
582015
Exploring alternative metals to Cu and W for interconnects applications using automated first-principles simulations
K Sankaran, S Clima, M Mees, G Pourtois
ECS Journal of Solid State Science and Technology 4 (1), N3127, 2014
542014
RRAMs based on anionic and cationic switching: a short overview
S Clima, K Sankaran, YY Chen, A Fantini, U Celano, A Belmonte, L Zhang, ...
physica status solidi (RRL)–Rapid Research Letters 8 (6), 501-511, 2014
532014
Analysis and modeling of the high vacuum scanning spreading resistance microscopy nanocontact on silicon
P Eyben, F Clemente, K Vanstreels, G Pourtois, T Clarysse, E Duriau, ...
Journal of Vacuum Science & Technology B 28 (2), 401-406, 2010
512010
Modeling of copper diffusion in amorphous aluminum oxide in CBRAM memory stack
K Sankaran, L Goux, S Clima, M Mees, JA Kittl, M Jurczak, L Altimime, ...
Ecs Transactions 45 (3), 317, 2012
462012
Ab initio screening of metallic MAX ceramics for advanced interconnect applications
K Sankaran, K Moors, Z Tőkei, C Adelmann, G Pourtois
Physical Review Materials 5 (5), 056002, 2021
332021
Properties of ultrathin molybdenum films for interconnect applications
V Founta, JP Soulié, K Sankaran, K Vanstreels, K Opsomer, P Morin, ...
Materialia 24, 101511, 2022
312022
Inflection points in interconnect research and trends for 2nm and beyond in order to solve the RC bottleneck
Z Tőkei, V Vega, G Murdoch, M O’Toole, K Croes, R Baert, ...
2020 IEEE International Electron Devices Meeting (IEDM), 32.2. 1-32.2. 4, 2020
242020
Thin Co/Ni-based bottom pinned spin-transfer torque magnetic random access memory stacks with high annealing tolerance
Y Tomczak, J Swerts, S Mertens, T Lin, S Couet, E Liu, K Sankaran, ...
Applied Physics Letters 108 (4), 2016
232016
First-principles modeling of intrinsic and extrinsic defects in γ-Al2O3
K Sankaran, G Pourtois, R Degraeve, MB Zahid, GM Rignanese, ...
Applied Physics Letters 97 (21), 2010
232010
Experimental observation of back-hopping with reference layer flipping by high-voltage pulse in perpendicular magnetic tunnel junctions
W Kim, S Couet, J Swerts, T Lin, Y Tomczak, L Souriau, D Tsvetanova, ...
IEEE Transactions on Magnetics 52 (7), 1-4, 2016
202016
Study of the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations
A Dabral, G Pourtois, K Sankaran, W Magnus, H Yu, AJ de Meux, AKA Lu, ...
ECS Journal of Solid State Science and Technology 7 (6), N73, 2018
162018
Resistivity scaling model for metals with conduction band anisotropy
M De Clercq, K Moors, K Sankaran, G Pourtois, S Dutta, C Adelmann, ...
Physical Review Materials 2 (3), 033801, 2018
142018
Demonstration of a free-layer developed with atomistic simulations enabling BEOL compatible VCMA-MRAM with a coefficient≥ 100fJ/Vm
R Carpenter, W Kim, K Sankaran, N Ao, MB Chroud, A Kumar, A Trovato, ...
2021 IEEE International Electron Devices Meeting (IEDM), 17.6. 1-17.6. 4, 2021
122021
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