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Huamin Li
Huamin Li
Assistant Professor, University at Buffalo
Verified email at buffalo.edu - Homepage
Title
Cited by
Cited by
Year
Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide
HM Li, D Lee, D Qu, X Liu, J Ryu, A Seabaugh, WJ Yoo
Nature communications 6 (1), 6564, 2015
3532015
Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p–n Junction
X Liu, D Qu, HM Li, I Moon, F Ahmed, C Kim, M Lee, Y Choi, JH Cho, ...
ACS nano 11 (9), 9143-9150, 2017
1832017
Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors
HM Li, DY Lee, MS Choi, D Qu, X Liu, CH Ra, WJ Yoo
Scientific reports 4 (1), 4041, 2014
1392014
Hybrid energy harvester based on nanopillar solar cells and PVDF nanogenerator
DY Lee, H Kim, HM Li, AR Jang, YD Lim, SN Cha, YJ Park, DJ Kang, ...
Nanotechnology 24 (17), 175402, 2013
542013
Frequency and temperature dependence of the dielectric properties of a PCB substrate for advanced packaging applications
HM Li, CH Ra, G Zhang, WJ Yoo, KW Lee, JD Kim
Journal of the Korean Physical Society 54 (3), 1096-1099, 2009
532009
Dual-phase MoS2/MXene/CNT ternary nanohybrids for efficient electrocatalytic hydrogen evolution
S Wei, Y Fu, M Liu, H Yue, S Park, YH Lee, H Li, F Yao
npj 2D Materials and Applications 6 (1), 25, 2022
442022
Electric Double Layer Dynamics in Poly(ethylene oxide) LiClO4 on Graphene Transistors
HM Li, K Xu, B Bourdon, H Lu, YC Lin, JA Robinson, AC Seabaugh, ...
The Journal of Physical Chemistry C 121 (31), 16996-17004, 2017
382017
High performance WSe2 p-MOSFET with intrinsic n-channel based on back-to-back p–n junctions
X Liu, Y Pan, J Yang, D Qu, H Li, WJ Yoo, J Sun
Applied Physics Letters 118 (23), 2021
282021
Two-dimensional cold electron transport for steep-slope transistors
M Liu, HN Jaiswal, S Shahi, S Wei, Y Fu, C Chang, A Chakravarty, X Liu, ...
ACS nano 15 (3), 5762-5772, 2021
282021
Enhanced carrier transport by transition metal doping in WS 2 field effect transistors
M Liu, S Wei, S Shahi, HN Jaiswal, P Paletti, S Fathipour, M Remškar, ...
Nanoscale 12 (33), 17253-17264, 2020
282020
Localized surface plasmon resonances caused by Ag nanoparticles on SiN for solar cell applications
C Yang, G Zhang, HM Li, WJ Yoo, YJ Park, JM Kim
J. Korean Phys. Soc 56 (5), 1488-1491, 2010
262010
Steep slope transistors: Tunnel FETs and beyond
A Seabaugh, C Alessandri, MA Heidarlou, HM Li, L Liu, H Lu, S Fathipour, ...
2016 46th European Solid-State Device Research Conference (ESSDERC), 349-351, 2016
252016
Mechanism, material, design, and implementation principle of two-dimensional material photodetectors
C Yang, G Wang, M Liu, F Yao, H Li
Nanomaterials 11 (10), 2688, 2021
212021
Diode-like Selective Enhancement of Carrier Transport through Metal-Semiconductor Interface Decorated by Monolayer Boron Nitride
HN Jaiswal, M Liu, S Shahi, S Wei, J Lee, A Chakravarty, Y Guo, R Wang, ...
Advanced Materials 32 (36), 2002716, 2020
202020
Enhancement of light absorption using high-k dielectric in localized surface plasmon resonance for silicon-based thin film solar cells
HM Li, G Zhang, C Yang, DY Lee, YD Lim, TZ Shen, WJ Yoo, YJ Park, ...
Journal of Applied Physics 109 (9), 2011
172011
Optoelectronic performance of radial-junction Si nanopillar and nanohole solar cells
HM Li, DY Lee, WJ Yoo
IEEE transactions on electron devices 59 (9), 2368-2374, 2012
162012
Monolayer MoS2 Steep-slope Transistors with Record-high Sub-60-mV/decade Current Density Using Dirac-source Electron Injection
M Liu, HN Jaiswal, S Shahi, S Wei, Y Fu, C Chang, A Chakravarty, F Yao, ...
2020 IEEE International Electron Devices Meeting (IEDM), 12.5. 1-12.5. 4, 2020
132020
Reconfigurable Electric Double Layer Doping in an MoS2Nanoribbon Transistor
C Alessandri, S Fathipour, H Li, I Kwak, A Kummel, M Remškar, ...
IEEE Transactions on Electron Devices 64 (12), 5217-5222, 2017
122017
Localized surface plasmon resonance on two-dimensional HfSe2 and ZrSe2
HN Jaiswal, M Liu, S Shahi, F Yao, Q Zhao, X Xu, H Li
Semiconductor Science and Technology 33 (12), 124014, 2018
102018
Record high current density and low contact resistance in MoS2 FETs by ion doping
S Fathipour, HM Li, M Remškar, L Yeh, W Tsai, Y Lin, S Fullerton-Shirey, ...
2016 International Symposium on VLSI Technology, Systems and Application …, 2016
102016
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Articles 1–20