| Optical critical points of thin-film alloys: A comparative study VR D’costa, CS Cook, AG Birdwell, CL Littler, M Canonico, S Zollner, ... Physical Review B—Condensed Matter and Materials Physics 73 (12), 125207, 2006 | 447 | 2006 |
| Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures D Kohen, N Bhargava, J Tolle, V D'costa US Patent 10,535,516, 2020 | 299 | 2020 |
| Perfectly tetragonal, tensile-strained Ge on Ge1− ySny buffered Si (100) YY Fang, J Tolle, R Roucka, AVG Chizmeshya, J Kouvetakis, VR D’Costa, ... Applied physics letters 90 (6), 2007 | 159 | 2007 |
| Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys VR D’Costa, YY Fang, J Tolle, J Kouvetakis, J Menendez Physical Review Letters 102 (10), 107403, 2009 | 158 | 2009 |
| Raman scattering in Ge1− ySny alloys VR D’costa, J Tolle, R Roucka, CD Poweleit, J Kouvetakis, J Menendez Solid State Communications 144 (5-6), 240-244, 2007 | 138 | 2007 |
| Sn-alloying as a means of increasing the optical absorption of Ge at the C-and L-telecommunication bands VR D'Costa, Y Fang, J Mathews, R Roucka, J Tolle, J Menéndez, ... Semiconductor science and technology 24 (11), 115006, 2009 | 123 | 2009 |
| Low temperature chemical vapor deposition of Si-based compounds via SiH3SiH2SiH3: Metastable SiSn∕ GeSn∕ Si (100) heteroepitaxial structures J Tolle, AVG Chizmeshya, YY Fang, J Kouvetakis, VR D’Costa, CW Hu, ... Applied physics letters 89 (23), 2006 | 120 | 2006 |
| Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors VR D'Costa, YY Fang, J Tolle, J Kouvetakis, J Menendez Thin Solid Films 518 (9), 2531-2537, 2010 | 110 | 2010 |
| Synthesis, stability range, and fundamental properties of Si− Ge− Sn semiconductors grown directly on Si (100) and Ge (100) platforms J Xie, AVG Chizmeshya, J Tolle, VR D’Costa, J Menendez, J Kouvetakis Chemistry of Materials 22 (12), 3779-3789, 2010 | 108 | 2010 |
| Molecular-based synthetic approach to new group IV materials for high-efficiency, low-cost solar cells and Si-based optoelectronics YY Fang, J Xie, J Tolle, R Roucka, VR D’Costa, AVG Chizmeshya, ... Journal of the American Chemical Society 130 (47), 16095-16102, 2008 | 106 | 2008 |
| Advances in SiGeSn technology R Soref, J Kouvetakis, J Tolle, J Menendez, V D’Costa Journal of Materials Research 22 (12), 3281-3291, 2007 | 99 | 2007 |
| Versatile buffer layer architectures based on Ge1− xSnx alloys R Roucka, J Tolle, C Cook, AVG Chizmeshya, J Kouvetakis, V D’Costa, ... Applied Physics Letters 86 (19), 2005 | 87 | 2005 |
| Transferability of optical bowing parameters between binary and ternary group-IV alloys VR D'Costa, CS Cook, J Menéndez, J Tolle, J Kouvetakis, S Zollner Solid State Communications 138 (6), 309-313, 2006 | 72 | 2006 |
| Compositional dependence of Raman frequencies in ternary alloys VR D’Costa, J Tolle, CD Poweleit, J Kouvetakis, J Menendez Physical Review B—Condensed Matter and Materials Physics 76 (3), 035211, 2007 | 69 | 2007 |
| Direct integration of active Ge1− x (Si4Sn) x semiconductors on Si (100) J Xie, J Tolle, VR D’Costa, AVG Chizmeshya, J Menendez, J Kouvetakis Applied Physics Letters 95 (18), 2009 | 57 | 2009 |
| Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength … Y Huang, JH Ryou, RD Dupuis, VR D'costa, EH Steenbergen, J Fan, ... Journal of Crystal Growth 314 (1), 92-96, 2011 | 54 | 2011 |
| Ge1− ySny photoconductor structures at 1.55 μm: From advanced materials to prototype devices R Roucka, J Xie, J Kouvetakis, J Mathews, V D’costa, J Menendez, J Tolle, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 50 | 2008 |
| Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon J Tolle, R Roucka, AVG Chizmeshya, J Kouvetakis, VR D’Costa, ... Applied physics letters 88 (25), 2006 | 50 | 2006 |
| Molecular approaches to p-and n-nanoscale doping of Ge1− ySny semiconductors: Structural, electrical and transport properties J Xie, J Tolle, VR D’Costa, C Weng, AVG Chizmeshya, J Menendez, ... Solid-state electronics 53 (8), 816-823, 2009 | 49 | 2009 |
| In-situ gallium-doping for forming p+ germanium-tin and application in germanium-tin p-i-n photodetector W Wang, S Vajandar, SL Lim, Y Dong, VR D'Costa, T Osipowicz, ES Tok, ... Journal of Applied Physics 119 (15), 155704, 2016 | 44 | 2016 |
