Hilde Hardtdegen
Hilde Hardtdegen
group leader Ernst Ruska Centre, Forschungszentrum Jülich GmbH
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The covalent functionalization of layered black phosphorus by nucleophilic reagents
Z Sofer, J Luxa, D Bouša, D Sedmidubský, P Lazar, T Hartman, ...
Angewandte Chemie International Edition 56 (33), 9891-9896, 2017
The state of strain in single GaN nanocolumns as derived from micro-photoluminescence measurements
N Thillosen, K Sebald, H Hardtdegen, R Meijers, R Calarco, S Montanari, ...
Nano Letters 6 (4), 704-708, 2006
Spin-orbit coupling and phase coherence in InAs nanowires
S Estévez Hernández, M Akabori, K Sladek, C Volk, S Alagha, ...
Physical Review B—Condensed Matter and Materials Physics 82 (23), 235303, 2010
The role of Si during the growth of GaN micro-and nanorods
C Tessarek, M Heilmann, E Butzen, A Haab, H Hardtdegen, C Dieker, ...
Crystal growth & design 14 (3), 1486-1492, 2014
Effect of Si-doping on InAs nanowire transport and morphology
S Wirths, K Weis, A Winden, K Sladek, C Volk, S Alagha, TE Weirich, ...
Journal of applied physics 110 (5), 2011
Suppression of weak antilocalization in narrow quantum wires
T Schäpers, VA Guzenko, MG Pala, U Zülicke, M Governale, J Knobbe, ...
Physical Review B—Condensed Matter and Materials Physics 74 (8), 081301, 2006
MOVPE growth of GaAs using a N2 carrier
H Hardtdegen, M Hollfelder, R Meyer, R Carius, H Münder, S Frohnhoff, ...
Journal of crystal growth 124 (1-4), 420-426, 1992
Weak antilocalization in a polarization-doped AlxGa1− xN∕ GaN heterostructure with single subband occupation
N Thillosen, T Schäpers, N Kaluza, H Hardtdegen, VA Guzenko
Applied physics letters 88 (2), 2006
Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires
C Blömers, T Rieger, P Zellekens, F Haas, MI Lepsa, H Hardtdegen, ...
Nanotechnology 24 (3), 035203, 2012
Effect of carrier gas on GaN epilayer characteristics
YS Cho, H Hardtdegen, N Kaluza, N Thillosen, R Steins, Z Sofer, H Lüth
physica status solidi c 3 (6), 1408-1411, 2006
Weak antilocalization in gate-controlled two-dimensional electron gases
N Thillosen, S Cabanas, N Kaluza, VA Guzenko, H Hardtdegen, ...
Physical Review B—Condensed Matter and Materials Physics 73 (24), 241311, 2006
Supercurrent in Nb/InAs-nanowire/Nb Josephson junctions
HY Günel, IE Batov, H Hardtdegen, K Sladek, A Winden, K Weis, ...
Journal of applied physics 112 (3), 2012
Mechanism of mobility increase of the two-dimensional electron gas in AlGaN∕ GaN heterostructures under small dose gamma irradiation
AM Kurakin, SA Vitusevich, SV Danylyuk, H Hardtdegen, N Klein, ...
Journal of applied physics 103 (8), 2008
Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires
F Haas, K Sladek, A Winden, M Von der Ahe, TE Weirich, T Rieger, H Lüth, ...
Nanotechnology 24 (8), 085603, 2013
Modern chemical synthesis methods towards low-dimensional phase change structures in the Ge–Sb–Te material system
H Hardtdegen, M Mikulics, S Rieß, M Schuck, T Saltzmann, U Simon, ...
Progress in crystal growth and characterization of materials 61 (2-4), 27-45, 2015
Nano-LED array fabrication suitable for future single photon lithography
M Mikulics, H Hardtdegen
Nanotechnology 26 (18), 185302, 2015
Weak antilocalization in high mobility two-dimensional electron gases with strong spin-orbit coupling
VA Guzenko, T Schäpers, H Hardtdegen
Physical Review B—Condensed Matter and Materials Physics 76 (16), 165301, 2007
Demonstration of a current-controlled three-terminal Josephson contact
T Schäpers, J Malindretos, K Neurohr, S Lachenmann, A Van der Hart, ...
Applied physics letters 73 (16), 2348-2350, 1998
Manipulating InAs nanowires with submicrometer precision
K Flöhr, M Liebmann, K Sladek, HY Günel, R Frielinghaus, F Haas, ...
Review of scientific instruments 82 (11), 2011
Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures
AM Kurakin, SA Vitusevich, SV Danylyuk, H Hardtdegen, N Klein, ...
Journal of applied physics 105 (7), 2009
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