Faisal Ahmed
Cited by
Cited by
Fermi level pinning at electrical metal contacts of monolayer molybdenum dichalcogenides
C Kim, I Moon, D Lee, MS Choi, F Ahmed, S Nam, Y Cho, HJ Shin, S Park, ...
ACS nano 11 (2), 1588-1596, 2017
P-type polar transition of chemically doped multilayer MoS2 transistor
X Liu, D Qu, J Ryu, F Ahmed, Z Yang, D Lee, WJ Yoo
arXiv preprint arXiv:1604.08162, 2015
Carrier‐Type Modulation and Mobility Improvement of Thin MoTe2
D Qu, X Liu, M Huang, C Lee, F Ahmed, H Kim, RS Ruoff, J Hone, WJ Yoo
Advanced Materials 29 (39), 1606433, 2017
Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p–n Junction
X Liu, D Qu, HM Li, I Moon, F Ahmed, C Kim, M Lee, Y Choi, JH Cho, ...
ACS nano 11 (9), 9143-9150, 2017
Miniaturized spectrometers with a tunable van der Waals junction
HH Yoon, HA Fernandez, F Nigmatulin, W Cai, Z Yang, H Cui, F Ahmed, ...
Science 378 (6617), 296-299, 2022
Carrier transport at the metal–MoS 2 interface
F Ahmed, MS Choi, X Liu, WJ Yoo
Nanoscale 7 (20), 9222-9228, 2015
High electric field carrier transport and power dissipation in multilayer black phosphorus field effect transistor with dielectric engineering
F Ahmed, YD Kim, MS Choi, X Liu, D Qu, Z Yang, J Hu, IP Herman, ...
Advanced Functional Materials 27 (4), 1604025, 2017
Impact ionization by hot carriers in a black phosphorus field effect transistor
F Ahmed, YD Kim, Z Yang, P He, E Hwang, H Yang, J Hone, WJ Yoo
Nature Communications 9, 3414, 2018
Dielectric Dispersion and High Field Response of Multilayer Hexagonal Boron Nitride
F Ahmed, S Heo, Z Yang, F Ali, CH Ra, HI Lee, T Taniguchi, J Hone, ...
Advanced Functional Materials, 1804235, 2018
Gate-Modulated Ultrasensitive Visible and Near-Infrared Photodetection of Oxygen Plasma-Treated WSe2 Lateral pn-Homojunctions
SB Mitta, F Ali, Z Yang, I Moon, F Ahmed, TJ Yoo, BH Lee, WJ Yoo
ACS applied materials & interfaces 12 (20), 23261-23271, 2020
Self-screened high performance multi-layer MoS 2 transistor formed by using a bottom graphene electrode
D Qu, X Liu, F Ahmed, D Lee, WJ Yoo
Nanoscale 7 (45), 19273-19281, 2015
High performance complementary WS 2 devices with hybrid Gr/Ni contacts
MF Khan, F Ahmed, S Rehman, I Akhtar, MA Rehman, PA Shinde, K Khan, ...
Nanoscale 12 (41), 21280-21290, 2020
Multilayer MoTe2 Field‐Effect Transistor at High Temperatures
F Ahmed, AM Shafi, DMA Mackenzie, MA Qureshi, HA Fernandez, ...
Advanced Materials Interfaces 8 (22), 2100950, 2021
Traps at the hBN/WSe2 interface and their impact on polarity transition in WSe2
F Ali, F Ahmed, M Taqi, SB Mitta, TD Ngo, DJ Eom, K Watanabe, ...
2D Materials 8 (3), 035027, 2021
Energy dissipation in black phosphorus heterostructured devices
F Ali, F Ahmed, Z Yang, I Moon, M Lee, Y Hassan, C Lee, WJ Yoo
Advanced Materials Interfaces 6 (2), 1801528, 2019
Engineering the Dipole Orientation and Symmetry Breaking with Mixed‐Dimensional Heterostructures
MG Uddin, S Das, AM Shafi, V Khayrudinov, F Ahmed, H Fernandez, L Du, ...
Advanced Science 9 (20), 2200082, 2022
Tunable Quantum Tunneling through a Graphene/Bi2Se3 Heterointerface for the Hybrid Photodetection Mechanism
HH Yoon, F Ahmed, Y Dai, HA Fernandez, X Cui, X Bai, D Li, M Du, ...
ACS applied materials & interfaces 13 (49), 58927-58935, 2021
Deterministic Polymorphic Engineering of MoTe2 for Photonic and Optoelectronic Applications
F Ahmed, C Rodríguez‐Fernández, HA Fernandez, Y Zhang, AM Shafi, ...
Advanced Functional Materials 33 (33), 2302051, 2023
Inducing Strong Light–Matter Coupling and Optical Anisotropy in Monolayer MoS2 with High Refractive Index Nanowire
AM Shafi, F Ahmed, HA Fernandez, MG Uddin, X Cui, S Das, Y Dai, ...
ACS applied materials & interfaces 14 (27), 31140-31147, 2022
Electronic device including 2-dimensional material
S Park, J Lee, RA Changho, YOO Wonjong, F Ahmed, Z Yang, ...
US Patent 10,269,975, 2019
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